Trench gate type transistor
The invention provides a trench gate type transistor in which the gate capacitance is reduced, the crystal defect is prevented and the gate breakdown voltage is enhanced. Trenches are formed in an N− type semiconductor layer. A uniformly thick silicon oxide film is formed on the bottom of each of the trenches and near the bottom, being round at corner portions. A silicon oxide film is formed on the upper portion of the sidewall of each of the trenches, which is thinner than the silicon oxide film and round at corner portions. Gate electrodes are formed from inside the trenches onto the outside thereof. The thick silicon oxide film reduces the gate capacitance, and the thin silicon oxide film on the upper portion provides good transistor characteristics. Furthermore, with the round corner portions, the crystal defect does not easily occur, and the gate electric field is dispersed to enhance the gate breakdown voltage.
1. A trench gate type transistor comprising:
a semiconductor layer having a trench formed therein, in plan view of the semiconductor layer, the trench being elongated in a first direction so as to have a first sidewall elongated in the first direction and a second sidewall disposed at an end of the first sidewall and extending in a second direction different from the first direction;
a gate insulation film disposed in the trench and extending outside the trench so as to overlie a top surface of the semiconductor layer;
a gate electrode disposed on the gate insulation film; and
a body layer formed in the semiconductor layer so as to be in contact with the gate insulation film on the first sidewall of the trench,
wherein, on the first sidewall of the trench where the body layer is in contact with the gate insulation film, the gate insulation film comprises a first portion having a first thickness on an upper portion of the sidewall of the trench and a second portion having a second thickness on a lower portion of the sidewall of the trench, the second thickness being larger than the first thickness, both the first portion and the second portion of the gate insulation film are in contact with the body layer, and the gate insulation film further comprises a third portion having the second thickness at a bottom of the trench, and
wherein, on the second sidewall of the trench, the gate insulation film is made only of the second portion and does not include the first portion that is thinner than the second portion.
2. The trench gate type transistor of claim 1 , wherein the gate insulation film is round at a top edge portion of the trench where the sidewall of the trench and the top surface of the semiconductor layer meet so as not to have an apex portion in a cross section thereof.
3. The trench gate type transistor of claim 1 , further comprising a high breakdown voltage MOS transistor formed on the semiconductor layer comprising another gate insulation film made of the gate insulation film.