IC card and booking-account system using the IC card
View Patent ↗It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
1. A method for manufacturing an article comprising:
forming a metal film over a first substrate;
forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;
forming a base film over the oxide film;
forming a semiconductor element over the base film;
separating the semiconductor element and the base film from the first substrate; and
after separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.
2. The method for manufacturing the article according to claim 1 , wherein the metal film comprises tungsten.
3. The method for manufacturing the article according to claim 1 , wherein the oxide film is formed without being exposed to air after the metal film is formed.
4. The method for manufacturing the article according to claim 1 , wherein a step of separating is performed by physical means.
5. The method for manufacturing the article according to claim 1 , wherein the first substrate is a glass substrate.
6. The method for manufacturing the article according to claim 1 , wherein the plastic substrate comprises polyimide.
7. The method for manufacturing the article according to claim 1 , wherein the second substrate is a printed wiring board.
8. The method for manufacturing the article according to claim 1 , wherein the article comprises a microprocessor, a memory, or a power source circuit.
9. A method for manufacturing an article comprising:
forming a metal film over a first substrate;
forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;
forming a base film over the oxide film;
forming a display device and a semiconductor element over the base film;
separating the display device, the semiconductor element, and the base film from the first substrate; and
after separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.
10. The method for manufacturing the article according to claim 9 , wherein the metal film comprises tungsten.
11. The method for manufacturing the article according to claim 9 , wherein the oxide film is formed without being exposed to air after the metal film is formed.
12. The method for manufacturing the article according to claim 9 , wherein a step of separating is performed by physical means.
13. The method for manufacturing the article according to claim 9 , wherein the first substrate is a glass substrate.
14. The method for manufacturing the article according to claim 9 , wherein the plastic substrate comprises polyimide.
15. The method for manufacturing the article according to claim 9 , wherein the display device is a light emitting device.
16. A method for manufacturing an article comprising:
forming a metal film over a first substrate;
forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;
forming a base film over the oxide film;
forming a semiconductor element comprising a polycrystalline semiconductor over the base film;
separating the semiconductor element and the base film from the first substrate; and
after separating the semiconductor element and the base film, attaching the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.
17. The method for manufacturing the article according to claim 16 , wherein the metal film comprises tungsten.
18. The method for manufacturing the article according to claim 16 , wherein the oxide film is formed without being exposed to air after the metal film is formed.
19. The method for manufacturing the article according to claim 16 , wherein a step of separating the semiconductor element is performed by physical means.
20. The method for manufacturing the article according to claim 16 , wherein the first substrate is a glass substrate.
21. The method for manufacturing the article according to claim 16 , wherein the plastic substrate comprises polyimide.
22. The method for manufacturing the article according to claim 16 , wherein the second substrate is a printed wiring board.
23. The method for manufacturing the article according to claim 16 , wherein the article comprises a microprocessor, a memory, or a power source circuit.
24. A method for manufacturing an article comprising:
forming a metal film over a first substrate;
forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;
forming a base film over the oxide film;
forming a display device and a semiconductor element comprising a polycrystalline semiconductor over the base film;
separating the display device, the semiconductor element, and the base film from the first substrate; and
after separating the semiconductor element and the base film, attaching the display device and the semiconductor element to a second substrate, wherein the second substrate is a plastic substrate.
25. The method for manufacturing the article according to claim 24 , wherein the metal film comprises tungsten.
26. The method for manufacturing the article according to claim 24 , wherein the oxide film is formed without being exposed to air after the metal film is formed.
27. The method for manufacturing the article according to claim 24 , wherein a step of separating the semiconductor element is performed by physical means.
28. The method for manufacturing the article according to claim 24 , wherein the first substrate is a glass substrate.
29. The method for manufacturing the article according to claim 24 , wherein the plastic substrate comprises polyimide.
30. The method for manufacturing the article according to claim 24 , wherein the display device is a light emitting device.