Method for dicing substrate
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1 , and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
1. A substrate dividing method comprising the steps of:
irradiating a laser light incident face of a substrate with laser light while positioning a light-converging point within the substrate, thereby forming a modified region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, and each modified region forming a starting point region configured for cutting the substrate inside the substrate at a predetermined distance from the laser light incident face of the substrate;
grinding the rear face of the substrate after the step of forming the starting point regions, wherein the substrate comprises at least a portion of each modified region after completion of the grinding step; and
dividing the substrate, wherein the substrate is divided when a fracture generated in a thickness direction of the substrate from each starting point region reaches the front face and the rear face of the substrate.
2. A substrate dividing method according to claim 1 , wherein the substrate is a semiconductor substrate.
3. A substrate dividing method according to claim 2 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm2) at the light-converging point and a pulse width of 1 μs or less.
4. A substrate dividing method according to claim 1 , wherein each modified region is a molten processed region.
5. A substrate dividing method according to claim 1 , wherein the substrate is an insulating substrate.
6. A substrate dividing method according to claim 1 , wherein the laser light incident face of the substrate is formed with a functional device.
7. A substrate dividing method according to claim 1 , wherein the step of grinding the substrate includes a step of subjecting the rear face of the substrate to chemical etching.
8. A substrate dividing method according to claim 1 , wherein each modified region includes a crack region.
9. A substrate dividing method according to claim 8 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
10. A substrate dividing method according to claim 1 , wherein each modified region includes a refractive index change region which is a region with a changed refractive index.
11. A substrate dividing method according to claim 10 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 ns or less.
12. A substrate dividing method according to claim 1 , wherein the substrate is made of a piezoelectric material.
13. A substrate dividing method according to claim 12 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
14. A substrate dividing method according to claim 1 , wherein the substrate is divided into a plurality of chips along the cutting lines.
15. A substrate dividing method according to claim 1 , wherein the substrate is divided when the fracture reaches the front face and the rear face of the substrate after the step of grinding the substrate.
16. A substrate dividing method according to claim 1 , wherein the substrate is divided when the fracture reaches the front face and the rear face of the substrate in the step of grinding the substrate.
17. A substrate dividing method comprising the steps of:
irradiating a laser light incident face of a substrate with laser light while positioning a light-converging point within the substrate, thereby forming a modified region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, and each modified region forming a starting point region configured for cutting the substrate inside the substrate at a predetermined distance from the laser light incident face of the substrate;
grinding the rear face of the substrate after the step of forming the starting point regions, thereby removing the modified regions from the substrate, wherein the substrate comprises at least a portion of a fracture generated in a thickness direction of the substrate from each starting point region after completion of the grinding step; and
dividing the substrate, wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate.
18. A substrate dividing method according to claim 17 , wherein the substrate is a semiconductor substrate.
19. A substrate dividing method according to claim 18 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
20. A substrate dividing method according to claim 17 , wherein each modified region is a molten processed region.
21. A substrate dividing method according to claim 17 , wherein the substrate is an insulating substrate.
22. A substrate dividing method according to claim 17 , wherein the laser light incident face of the substrate is formed with a functional device.
23. A substrate dividing method according to claim 17 , wherein the step of grinding the substrate includes a step of subjecting the rear face of the substrate to chemical etching.
24. A substrate dividing method according to claim 17 , wherein each modified region includes a crack region.
25. A substrate dividing method according to claim 24 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
26. A substrate dividing method according to claim 17 , wherein each modified region includes a refractive index change region which is a region with a changed refractive index.
27. A substrate dividing method according to claim 26 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 ns or less.
28. A substrate dividing method according to claim 17 , wherein the substrate is made of a piezoelectric material.
29. A substrate dividing method according to claim 28 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
30. A substrate dividing method according to claim 17 , wherein the substrate is divided into a plurality of chips along the cutting lines.
31. A substrate dividing method according to claim 17 , wherein the substrate is divided when the fracture reaches the front face and the rear face of the substrate after the step of grinding the substrate.
32. A substrate dividing method according to claim 17 , wherein the substrate is divided when the fracture reaches the front face and the rear face of the substrate in the step of grinding the substrate.
33. A method of manufacturing a semiconductor device formed using a substrate dividing method, the manufacturing method comprising the steps of:
irradiating a laser light incident face of a substrate, the substrate comprising semiconductor material and having a surface formed with at least one semiconductor device, with laser light while positioning a light-converging point within the substrate, thereby forming a modified region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, each modified region forming a starting point region configured for cutting the substrate, each modified region being located inside the substrate at a predetermined distance from the laser light incident face of the substrate; and
grinding the rear face of the substrate after the step of forming the starting point regions, wherein the substrate comprises at least a portion of each modified region after completion of the grinding step; and
dividing the substrate, wherein the substrate is divided when a fracture generated in a thickness direction of the substrate from each starting point region reaches the front face and the rear face of the substrate, thereby providing at least one manufactured semiconductor device.
34. A method of manufacturing a semiconductor device according to claim 33 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
35. A method of manufacturing a semiconductor device according to claim 33 , wherein each modified region is a molten processed region.
36. A method of manufacturing a semiconductor device according to claim 33 , wherein the laser incident face of the substrate is formed with a functional device.
37. A method of manufacturing a semiconductor device according to claim 33 , wherein the step of grinding the substrate includes a step of subjecting the rear face of the substrate to chemical etching.
38. A method of manufacturing a semiconductor device according to claim 33 , wherein each modified region includes a crack region.
39. A method of manufacturing a semiconductor device according to claim 38 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
40. A method of manufacturing a semiconductor device according to claim 33 , wherein each modified region includes a refractive index change region which is a region with a changed refractive index.
41. A method of manufacturing a semiconductor device according to claim 40 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 ns or less.
42. A method of manufacturing a semiconductor device according to claim 33 , wherein the substrate is divided into a plurality of chips along the cutting lines.
43. A method of manufacturing a semiconductor device according to claim 33 , wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate after the step of grinding the substrate.
44. A method of manufacturing a semiconductor device according to claim 33 , wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate in the step of grinding the substrate.
45. A method of manufacturing a semiconductor device formed using a substrate dividing method, the manufacturing method comprising the steps of:
irradiating a laser light incident face of a substrate, the substrate comprising semiconductor material and having a surface formed with at least one semiconductor device, with laser light while positioning a light-converging point within the substrate, thereby forming a modified region embedded within the substrate along each line of a plurality of cutting lines arranged in a grid with respect to the substrate, the substrate having a front face and a rear face through the substrate, the front face of the substrate being formed with at least one functional device, each modified region forming a starting point region for cutting the substrate, each modified region being located inside the substrate at a predetermined distance from the laser light incident face of the substrate; and
grinding the rear face of the substrate after the step of forming the starting point regions, thereby removing the modified regions from the substrate, wherein the substrate comprises at least a portion of a fracture generated in a thickness direction of the substrate from each starting point region after completion of the grinding step;
dividing the substrate, wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate, thereby providing at least one manufactured semiconductor device.
46. A method of manufacturing a semiconductor device according to claim 45 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
47. A method of manufacturing a semiconductor device according to claim 45 , wherein each modified region is a molten processed region.
48. A method of manufacturing a semiconductor device according to claim 45 , wherein the laser light incident face of the substrate is formed with a functional device.
49. A method of manufacturing, a semiconductor device according to claim 45 , wherein the step of grinding the substrate includes a step of subjecting the rear face of the substrate to chemical etching.
50. A method of manufacturing a semiconductor device according to claim 45 , wherein each modified region includes a crack region.
51. A method of manufacturing a semiconductor device according to claim 50 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 μs or less.
52. A method of manufacturing a semiconductor device according to claim 45 , wherein each modified region includes a refractive index change region which is a region with a changed refractive index.
53. A method of manufacturing a semiconductor device according to claim 52 , wherein the substrate is irradiated with the laser light under a condition with a peak power density of at least 1×10 8 (W/cm 2 ) at the light-converging point and a pulse width of 1 ns or less.
54. A method of manufacturing a semiconductor device according to claim 45 , wherein the substrate is divided into a plurality of chips along the cutting lines.
55. A method of manufacturing a semiconductor device according to claim 45 , wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate after the step of grinding the substrate.
56. A method of manufacturing a semiconductor device according to claim 45 , wherein the substrate is divided when each fracture reaches the front face and the rear face of the substrate in the step of grinding the substrate.