Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same
There is disclosed a sulfonate shown by the following general formula (2). R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − M + (2) (In the formula, R 1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom. M + represents a cation.) There can be provided: a novel sulfonate which is effective for a chemically amplified resist composition having a sufficiently high solubility (compatibility) in a resist solvent and a resin, a good storage stability, a PED stability, a further wider depth of focus, a good sensitivity, in particular a high resolution and a good pattern profile form; a photosensitive acid generator; a resist composition using this; a photomask blank, and a patterning process.
1. A sulfonate represented by the following general formula (1):
HO—C(CF 3 ) 2 —CH 2 SO 3 − M + (1)
wherein, M + represents a cation.
2. The sulfonate according to claim 1 , wherein the M + is any of a lithium ion, a sodium ion, a potassium ion, an ammonium ion, an iodonium ion, and a sulfonium ion.
3. A method for manufacturing the sulfonate according to claim 1 by reacting 2,2-bistrifluoromethyloxylane with a sulfur compound in water.
4. A sulfonate represented by the following general formula (2):
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − M + (2)
wherein, R 1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom; and M + represents a cation.
5. The sulfonate according to claim 4 , wherein the M + is any of a lithium ion, a sodium ion, a potassium ion, an ammonium ion, an iodonium ion, and a sulfonium ion.
6. The sulfonate according to claim 4 , wherein the sulfonate is a sulfonium salt of sulfonic acid represented by the following general formula (3):
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − R 2 R 3 R 4 S + (3)
wherein, R 1 represents the same as before; each R 2 , R 3 , and R 4 independently represents a linear or a branched alkyl, alkenyl, or oxoalkyl group, substituted or unsubstituted, having 1 to 10 carbon atoms, a substituted or an unsubstituted aryl, aralkyl, or aryl oxoalkyl group having 6 to 18 carbon atoms, or any two or more of R 2 , R 3 , and R 4 may be bonded with each other to form a ring together with a sulfur atom in the formula.
7. The sulfonate according to claim 6 , wherein the sulfonium salt of sulfonic acid is the one represented by the following general formula (4):
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − (R 5 (O) n ) m Ph′S + Ph 2 (4)
wherein, R 1 represents the same as before; R 5 represents a linear, a branched, or a cyclic alkyl or alkenyl group, substituted or unsubstituted, having 1 to 20 carbon atoms, or a substituted or an unsubstituted aryl group having 6 to 14 carbon atoms; “m” represents an integer of 1 to 5; “n” represents 0 or 1; Ph represents a phenyl group; Ph′ represents a phenyl group whose “m” hydrogen atoms are substituted by a R 5 (O) n —group.
8. The sulfonate according to claim 4 , wherein the sulfonate is an iodonium salt of sulfonic acid represented by the following general formula (5):
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − ((R 5 (O) n ) m Ph′) 2 I + (5)
wherein, R 1 represents the same as before; R 5 represents a linear, a branched, or a cyclic alkyl or alkenyl group, substituted or unsubstituted, having 1 to 20 carbon atoms, or a substituted or an unsubstituted aryl group having 6 to 14 carbon atoms; “m” represents an integer of 1 to 5; “n” represents 0 or 1; Ph′ represents a phenyl group whose “m” hydrogen atoms are substituted by a R 5 (O) n —group.
9. A photosensitive acid generator for use in a chemically amplified resist composition generating, by responding to a high energy beam, a sulfonic acid represented by the following general formula (6):
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − H + (6)
wherein, R 1 represents a linear, a branched, or a cyclic monovalent hydrocarbon group having 1 to 50 carbon atoms optionally containing a hetero atom.
10. The photosensitive acid generator according to claim 9 , wherein the photosensitive acid generator comprises any one of the sulfonates represented by the following general formulae (3) to (5),
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − R 2 R 3 R 4 S + (3)
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − (R 5 (O) n ) m Ph′S + Ph 2 (4)
R 1 —COOC(CF 3 ) 2 —CH 2 SO 3 − ((R 5 (O) n ) m Ph′) 2 I + (5)
wherein, R 1 represents the same as before;
each R 2 , R 3 , and R 4 independently represents a linear or a branched alkyl, alkenyl, or oxoalkyl group, substituted or unsubstituted, having 1 to 10 carbon atoms, a substituted or an unsubstituted aryl, aralkyl, or aryl oxoalkyl group having 6 to 18 carbon atoms, or any two or more of R 2 , R 3 , and R 4 may be bonded with each other to form a ring together with a sulfur atom in the formula;
R 5 represents a linear, a branched, or a cyclic alkyl or alkenyl group, substituted or unsubstituted, having 1 to 20 carbon atoms, or a substituted or an unsubstituted aryl group having 6 to 14 carbon atoms;
“m” represents an integer of 1 to 5;
“n” represents 0 or 1;
Ph represents a phenyl group; and
Ph′ represents a phenyl group whose “m” hydrogen atoms are substituted by a R 5 (O) n —group.
11. A resist composition comprising a base resin, an acid generator, and an organic solvent, wherein the acid generator is the photosensitive acid generator according to claim 9 .
12. A resist composition comprising a base resin, an acid generator, and an organic solvent, wherein the acid generator is the photosensitive acid generator according to claim 10 .
13. The resist composition according to claim 11 , wherein the resist composition is a chemically amplified positive resist composition, wherein the base resin contained in the resist composition is not soluble or sparingly soluble in a developer but soluble in the developer by an acid.
14. The resist composition according to claim 12 , wherein the resist composition is a chemically amplified positive resist composition, wherein the base resin contained in the resist composition is not soluble or sparingly soluble in a developer but soluble in the developer by an acid.
15. The resist composition according to claim 11 , wherein the resist composition contains further a basic compound.
16. The resist composition according to claim 14 , wherein the resist composition contains further a basic compound.
17. A patterning process comprising at least a step of coating the resist composition according to claim 11 onto a substrate; a step of pattern-exposing by using a high energy beam via a photomask after a heat-treatment; and, after the heat-treatment as appropriate, a step of developing by using a developer.
18. A patterning process comprising at least a step of coating the resist composition according to claim 16 onto a substrate; a step of pattern-exposing by using a high energy beam via a photomask after a heat-treatment; and, after the heat-treatment as appropriate, a step of developing by using a developer.
19. A photomask blank, wherein the resist composition according to claim 11 is formed on a chrome compound layer.
20. A photomask blank, wherein the resist composition according to claim 16 is formed on a chrome compound layer.