Semiconductor device

1. A semiconductor device comprising:

one or two semiconductor chips that include an interconnect layer; and

an interconnect substrate attached to an interconnect layer side of said one or two semiconductor chips,

wherein said one or two semiconductor chips includes:

a first circuit that generates a signal;

a second circuit that processes said signal;

a first inductor that is formed in said interconnect layer, and is connected to one of said first circuit and said second circuit;

a chip-side connecting terminal that is formed in an uppermost layer of said interconnect layer, and is connected to the other one of said first circuit and said second circuit,

said interconnect substrate includes:

a second inductor that is located above said first inductor; and

a substrate-side connecting terminal that is connected to said second inductor, and is located above said chip-side connecting terminal,

said chip-side connecting terminal and said substrate-side connecting terminal are connected through a first solder ball or a first bump.

2. The semiconductor device according to claim 1 , further comprising:

a first dummy connecting terminal that is formed in the uppermost layer of said interconnect layer of said one or two semiconductor chips; and

a second dummy connecting terminal that is formed in said interconnect substrate, and is located above said first dummy connecting terminal,

wherein said first dummy connecting terminal and said second dummy connecting terminal are connected through a second solder ball or a second bump.

3. The semiconductor device according to claim 1 , further comprising

a sealing resin that seals a space between said one or two semiconductor chips and said interconnect substrate,

wherein said sealing resin is not formed in a region that overlaps said second inductor when seen in a planar view.

4. The semiconductor device according to claim 1 ,

wherein said second inductor is formed on one face of said interconnect substrate, and

an end of a center portion of said second inductor is connected to said substrate-side connecting terminal through a penetrating interconnect penetrating through said interconnect substrate, and an interconnect provided on the other face of said interconnect substrate.

5. The semiconductor device according to claim 1 ,

wherein said interconnect substrate includes a multilayer interconnect,

said second inductor is formed in said multilayer interconnect, and

the end of the center portion of said second inductor is connected to said substrate-side connecting terminal through an interconnect formed in a layer different from a layer having said second inductor in said multilayer interconnect, and a via.

6. The semiconductor device according to claim 1 , comprising

two sets each of said first circuit, said first inductor, said second circuit, and said two chip-side connecting terminals that are provided in said one or two semiconductor chips, and two sets each of said second inductor and said substrate-side connecting terminal that are provided in said interconnect substrate,

wherein said two sets of said two chip-side connecting terminals and said two sets of said substrate-side connecting terminal are respectively connected through said first solder ball or said first bump.

7. The semiconductor device according to claim 6 , comprising

a first semiconductor chip and a second semiconductor chip as said one or two semiconductor chips,

wherein said interconnect substrate is placed over said first semiconductor chip and said second semiconductor chip,

said first circuit and said first inductor of a first set, and said second circuit and said two chip-side connecting terminals of a second set are formed in said first semiconductor chip, and

said first circuit and said first inductor of said second set, and said second circuit and said two chip-side connecting terminals of said first set are formed in said second semiconductor chip.

8. The semiconductor device according to claim 1 , comprising

a first semiconductor chip and a second semiconductor chip as said one or two semiconductor chips,

wherein said first circuit and said first inductor are formed in said first semiconductor chip,

said second circuit is formed in said second semiconductor chip, and

said interconnect substrate is placed over said first semiconductor chip and said second semiconductor chip.

9. The semiconductor device according to claim 1 ,

wherein said first circuit, said second circuit, said first inductor, and said chip-side connecting terminal are formed in one of said semiconductor chips,

said first circuit and said first inductor are formed in a first region of said semiconductor chip,

said second circuit and said chip-side connecting terminal are formed in a second region of said semiconductor chip, and

said first region and said second region are insulated from each other.