IP Library › Granted Patent US 8,283,768
Granted Patent B2
US 8,283,768 · App. 12/424,514 · Granted Oct 9, 2012

Wafer Level package for heat dissipation and method of manufacturing the same

Assignee: Samsung Electro-Mechanics Co., Ltd.
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Quick Facts
Patent No.
US 8,283,768
App. No.
12/424,514
Granted
Oct 9, 2012
Kind
B2
Abstract

Disclosed herein are a wafer level package for heat dissipation and a method of manufacturing the same. The wafer level package includes a heat dissipation plate including a cavity and a hole, a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner, a thermal conductive adhesive disposed between the die and an inner wall of the cavity and disposed in the hole, and a redistribution layer connected at one end to the pad and at the other end extended. The wafer level package protects the die from external environments and enables the die to be easily flush with the heat dissipation plate.

Claims (14)

1. A wafer level package for heat dissipation comprising:

a heat dissipation plate including a cavity and a hole formed therein;

a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner;

a thermal conductive adhesive disposed between the die and an inner wall of the cavity and formed in the hole; and

a redistribution layer connected at one end to the pad directly and which at the other end is extended,

wherein the hole is formed in the cavity to penetrate the heat dissipation plate; and,

the thermal conductive adhesive is formed to enclose the die.

2. The wafer level package for heat dissipation according to claim 1 , further comprising:

a solder resist layer formed on the die and having an opening through which the other end of the redistribution layer is extended; and

an external connection terminal formed on the other end of the redistribution layer.

3. The wafer level package for heat dissipation according to claim 1 , wherein the hole is formed through the heat dissipation plate.

4. The wafer level package for heat dissipation according to claim 1 , wherein the hole includes a plurality of holes formed in the heat dissipation plate.

5. The wafer level package for heat dissipation according to claim 1 , wherein the hole is formed at a periphery of the heat dissipation plate and has a sector section.

6. The wafer level package for heat dissipation according to claim 5 , wherein the hole has a quadrangular section in which adjacent sides of the quadrant, which correspond to a radius of the hole, define a right angle with respect to each other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 17, 2009
From: KANG, JOON SEOK; YI, SUNG; KWEON, YOUNG DO
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 022563/0372 →
Priority Claims (1)
KR 10-2009-0009369 · Feb 5, 2009 · national
Continuity (1)
Related Publication 20100193932A1 · Aug 5, 2010