Method forming contact plug for semiconductor device using H2 remote plasma treatment
Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H 2 remote plasma treating the W/WN barrier layer, forming a W-plug on the H 2 remote plasma treated W/WN barrier layer to fill the contact hole, and chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.
1. A method of forming a contact plug of a semiconductor device, comprising:
forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed;
forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure;
forming a W layer and then a WN layer to form a W/WN barrier layer that includes fluorine in the contact hole using a pulsed nucleation layer (PNL) method, a chemical vapor deposition (CVD) method, and/or a cyclic CVD method;
reducing a fluorine concentration within the W/WN barrier layer using a H 2 remote plasma treatment;
forming a W-plug on the H 2 remote plasma treated W/WN barrier layer to fill the contact hole; and
chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer.
2. The method of claim 1 , wherein the H 2 remote plasma treating comprises using a H 2 source material.
3. The method of claim 1 , wherein forming W/WN barrier layer comprises using an atomic layer deposition (ALD) method.
4. The method of claim 3 , wherein forming of the W/WN barrier layer comprises using WF 6 as the source material.
5. The method of claim 4 , wherein forming of the W/WN barrier layer comprises using B 2 H 6 , SiH 4 , Si 2 H 6 , and/or a combination thereof as a reaction material that reacts with the source material.
6. The method of claim 1 , wherein the H 2 remote plasma treating of the W/WN barrier layer comprises performing the H 2 remote plasma treating of the W/WN barrier layer in-situ in the same equipment in which the W/WN is deposited.
7. The method of claim 6 , wherein the in-situ H 2 remote plasma treating of the W/WN barrier layer comprises performing the in-situ H 2 remote plasma treating of the W/WN barrier layer in the same chamber in which the W/WN is deposited.
8. The method of claim 1 , wherein forming the W-plug comprises using an ALD method, a PNL method, a cyclic CVD method, a CVD method, and/or a physical vapor deposition (PVD) method.
9. The method of claim 1 , wherein the W/WN barrier layer comprises a thickness in a range from 20 to 200 Å, and wherein the WN comprises a thickness in a range from 50 to 500 Å.
10. The method of claim 1 , wherein chemical mechanical polishing comprises using a wet chemical material having H 2 O 2 .
11. The method of claim 1 , wherein the lower structure comprises an impurity region, a gate electrode, a contact pad, a bit line, and/or a metal wire formed on the semiconductor substrate.
12. The method of claim 1 , wherein the interlayer insulating layer comprises a low-dielectric layer.
13. A method of forming a contact plug of a semiconductor device, comprising:
reducing, using H 2 remote plasma, a fluorine concentration within a W/WN barrier layer that includes fluorine and that is in a contact hole that is formed in an interlayer insulating layer on a semiconductor substrate;
forming a W-plug on the reduced fluorine concentration W/WN barrier layer to fill the contact hole; and
chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer,
wherein forming the W-plug comprises using an ALD method, a PNL method, a cyclic CVD method, and/or a physical vapor deposition (PVD) method.
14. The method of claim 13 , wherein the semiconductor substrate comprises a lower structure that is exposed by the contact hole.
15. The method of claim 14 , wherein the lower structure comprises an impurity region, a gate electrode, a contact pad, a bit line, and/or a metal wire formed on the semiconductor substrate.
16. The method of claim 13 , wherein treating, using the H 2 remote plasma, comprises using a H 2 source material.
17. The method of claim 13 , wherein forming the W-plug comprises using a CVD method.
18. The method of claim 13 , wherein the interlayer insulating layer comprises a low-dielectric layer.
19. A method of forming a contact plug of a semiconductor device, comprising:
forming a low dielectric interlayer insulating layer on a semiconductor substrate on which a lower structure is formed;
forming a contact hole in the low dielectric interlayer insulating layer, the contact hole exposing the lower structure;
forming a W layer and then a WN layer to form a W/WN barrier layer that includes fluorine in the contact hole using a pulsed nucleation layer (PNL) method, a chemical vapor deposition (CVD) method, and/or a cyclic CVD method;
reducing a fluorine concentration within the W/WN barrier layer using H 2 remote plasma treatment on the W/WN barrier layer in-situ in the same equipment in which the W/WN is deposited;
forming a W-plug on the reduced fluorine concentration W/WN barrier layer to fill the contact hole using an ALD method, a PNL method, a cyclic CVD method, and/or a physical vapor deposition (PVD) method; and
chemical mechanical polishing (CMP) the W-plug and then the W/WN barrier layer in order to expose the interlayer insulating layer using a wet chemical material having H 2 O 2 .
20. The method of claim 19 , wherein the lower structure comprises an impurity region, a gate electrode, a contact pad, a bit line, and/or a metal wire formed on the semiconductor substrate.