Semiconductor device including a temperature sensor circuit
A semiconductor device including a temperature sensor includes a pull up circuit, a pull down circuit, a first additional current path, and a second additional current path. The pull up circuit is configured to generate a pull up current that contributes to generation of a first output current. The pull down circuit is operably coupled to the pull up circuit at an output node and configured to generate a pull down current that contributes to generation of a second output current. The first additional current path, when enabled, is configured to combine a first additional current with the pull up current to comprise the first output current. The second additional current path, when enabled, is configured to combine a second additional current with the pull down current to comprise the second output current. Respective enablement of the first additional current path and the second additional current path is complementary.
1. A semiconductor device including at least one temperature sensor, the at least one temperature sensor comprising:
a pull up circuit configured to generate a pull up current operably coupled to a pull down circuit configured to generate a pull down current, wherein the pull up circuit and the pull down circuit each include a plurality of temperature sensitive circuit elements;
a pull up transistor serially coupled with at least one first switch, the pull up transistor and the at least one first switch coupled in parallel to the pull up circuit and together configured to generate a pull up output current; and
a pull down transistor serially coupled with at least one second switch, the pull down transistor and the at least one second switch coupled in parallel to the pull down circuit and together configured to generate a pull down output current, wherein the at least one first switch and the at least one second switch are complementarily enabled in response to a temperature change.
2. The semiconductor device of claim 1 , further comprising a comparator operably coupled to an output signal and configured to compare the output signal and a reference signal and to control enablement of the at least one first switch and the at least one second switch.
3. The semiconductor device of claim 1 , wherein the average values of the pull up output current and the pull down output current are substantially equal.
4. The semiconductor device of claim 1 , wherein the temperature sensitive circuit elements are configured such that the pull up current and the pull down current change with temperature at substantially the same rate.
5. A semiconductor device, comprising:
at least one temperature sensor, the at least one temperature sensor comprising:
a pull up circuit configured to generate a pull up current;
a pull down circuit operably coupled to the pull up circuit, and configured to generate a pull down current, wherein the pull up circuit and the pull down circuit each include a plurality of temperature sensitive circuit elements;
a first transistor serially coupled with at least one first switch, the first transistor and the at least one first switch coupled in parallel to the pull up circuit, and configured to generate a first output current; and
a second transistor serially coupled with at least one second switch, the second transistor and the at least one second switch coupled in parallel to the pull down circuit, and configured to generate a second output current, wherein the at least one first switch and the at least one second switch are complementarily enabled in response to temperature change.
6. The semiconductor device of claim 5 , further comprising a comparator operably coupled to an output signal and configured to compare the output signal and a reference signal and to control enablement of the at least one first switch and the at least one second switch.
7. The semiconductor device of claim 5 , wherein an average value of the first output current is substantially equal to an average value of the second output current.
8. The semiconductor device of claim 5 , wherein the temperature sensitive circuit elements are configured such that the pull up current and the pull down current change with temperature at substantially the same rate.
9. The semiconductor device of claim 5 , further comprising a temperature estimate signal correlated to the number of times that the second switch is enabled in a full cycle of counts.
10. The semiconductor device of claim 9 , wherein the temperature estimate signal changes substantially linearly with the temperature change.