Method of manufacturing a semiconductor device
View Patent ↗A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
1. A method of manufacturing a semiconductor device comprising:
forming a base insulating film over a substrate in a multi-chamber apparatus having a plurality of film formation chambers;
forming a semiconductor film comprising amorphous silicon over the base insulating film in the multi-chamber apparatus;
crystallizing the semiconductor film; and
forming a gate insulating film over the semiconductor film,
wherein each of the base insulating film and the semiconductor film is formed by CVD, and
wherein the base insulating film includes fluorine.
2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the base insulating film is selected from a silicon oxide film, a silicon nitride film, an aluminum nitride film, and an aluminum oxynitride film.
3. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the gate insulating film is a silicon oxide film.
4. The method of manufacturing a semiconductor device according to claim 1 ,
wherein each of the base insulating film and the semiconductor film is formed by plasma CVD.
5. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the gate insulating film is formed by CVD.
6. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor device is an active matrix display device.
7. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the base insulating film and the semiconductor film are successively formed without exposing to air.
8. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the base insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.
9. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the semiconductor film is formed in a different film formation chamber from the base insulating film.
10. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
cleaning one of the plurality of film formation chambers by a cleaning gas.
11. The method of manufacturing a semiconductor device according to claim 10 ,
wherein the cleaning gas comprises NF 3 .
12. The method of manufacturing a semiconductor device according to claim 1 , further comprising a step of taking the substrate out of the multi-chamber apparatus before crystallizing the semiconductor film,
wherein the crystallization of the semiconductor film is performed outside the multi-chamber apparatus.
13. A method of manufacturing a semiconductor device comprising:
forming a base insulating film over a substrate in a multi-chamber apparatus having a plurality of film formation chambers;
forming a semiconductor film comprising amorphous silicon over the base insulating film in the multi-chamber apparatus;
crystallizing the semiconductor film;
forming a gate insulating film over the semiconductor film; and
forming a gate electrode over the gate insulating film,
wherein each of the base insulating film and the semiconductor film is formed by CVD, and
wherein the base insulating film includes fluorine.
14. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the base insulating film is selected from a silicon oxide film, a silicon nitride film, an aluminum nitride film, and an aluminum oxynitride film.
15. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the gate insulating film is a silicon oxide film.
16. The method of manufacturing a semiconductor device according to claim 13 ,
wherein each of the base insulating film and the semiconductor film is formed by plasma CVD.
17. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the gate insulating film is formed by CVD.
18. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the semiconductor device is an active matrix display device.
19. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the base insulating film and the semiconductor film are successively formed without exposing to air.
20. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the base insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus.
21. The method of manufacturing a semiconductor device according to claim 13 ,
wherein the semiconductor film is formed in a different film formation chamber from the base insulating film.
22. The method of manufacturing a semiconductor device according to claim 13 , further comprising:
cleaning one of the plurality of film formation chambers by a cleaning gas.
23. The method of manufacturing a semiconductor device according to claim 22 ,
wherein the cleaning gas comprises NF 3 .
24. A method of manufacturing a semiconductor device comprising:
forming an insulating film over a substrate in a first film formation chamber included in a multi-chamber apparatus;
forming a semiconductor film comprising amorphous silicon over the insulating film in a second film formation chamber included in the multi-chamber apparatus;
forming a gate insulating film over the semiconductor film; and
forming a gate electrode over the gate insulating film,
wherein each of the insulating film and the semiconductor film is formed by CVD,
wherein the insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus, and
wherein the insulating film includes fluorine.
25. The method of manufacturing a semiconductor device according to claim 24 ,
wherein the insulating film is selected from a silicon oxide film, a silicon nitride film, an aluminum nitride film, and an aluminum oxynitride film.
26. The method of manufacturing a semiconductor device according to claim 24 ,
wherein each of the insulating film and the semiconductor film is formed by plasma CVD.
27. The method of manufacturing a semiconductor device according to claim 24 ,
wherein the semiconductor device is an active matrix display device.
28. The method of manufacturing a semiconductor device according to claim 24 , further comprising:
cleaning one of the first and second film formation chambers by a cleaning gas.
29. The method of manufacturing a semiconductor device according to claim 28 ,
wherein the cleaning gas comprises NF 3 .
30. The method of manufacturing a semiconductor device according to claim 24 , further comprising a step of taking the substrate out of the multi-chamber apparatus and then crystallizing the semiconductor film outside the multi-chamber apparatus.
31. A method of manufacturing a semiconductor device comprising:
forming an insulating film over a substrate in a first film formation chamber of a multi-chamber apparatus having the first film formation chamber, a substrate transfer chamber, and a second film formation chamber;
transferring the substrate from the first film formation chamber to the second film formation chamber through the substrate transfer chamber; and
forming a semiconductor film comprising amorphous silicon over the insulating film in the second film formation chamber,
wherein each of the insulating film and the semiconductor film is formed by CVD,
wherein the insulating film and the semiconductor film are successively formed without taking the substrate out of the multi-chamber apparatus, and
wherein the insulating film includes fluorine.
32. The method of manufacturing a semiconductor device according to claim 31 ,
wherein the insulating film is selected from a silicon oxide film, a silicon nitride film, an aluminum nitride film, and an aluminum oxynitride film.
33. The method of manufacturing a semiconductor device according to claim 31 ,
wherein each of the insulating film and the semiconductor film is formed by plasma CVD.
34. The method of manufacturing a semiconductor device according to claim 31 ,
wherein the semiconductor device is an active matrix display device.
35. The method of manufacturing a semiconductor device according to claim 31 ,
wherein the substrate transfer chamber is connected to the first and second film formation chambers.
36. The method of manufacturing a semiconductor device according to claim 31 , further comprising:
cleaning at least one of the first and second film formation chambers by a cleaning gas.
37. The method of manufacturing a semiconductor device according to claim 36 ,
wherein the cleaning gas comprises NF 3 .
38. The method of manufacturing a semiconductor device according to claim 31 , further comprising a step of taking the substrate out of the multi-chamber apparatus and then crystallizing the semiconductor film outside the multi-chamber apparatus.