System and method for input pin ESD protection with floating and/or biased polysilicon regions

1. A system for electrostatic discharge protection, the system comprising:

a first transistor including a first drain;

a second transistor including a second drain;

a resistor including a first terminal and a second terminal, the first terminal being coupled to the first drain and the second drain;

a third transistor coupled to the second terminal and a protected system, the third transistor including a first gate, a first dielectric layer located between the first gate and a first substrate, a first source, and a third drain, the protected system including a fourth transistor, the fourth transistor including a second gate, a second dielectric layer located between the second gate and a second substrate, a second source, and a fourth drain;

wherein:

the third transistor is selected from a plurality of transistors, the plurality of transistors including a plurality of gate regions, a plurality of source regions, and a plurality of drain regions;

each of the plurality of gate regions intersects a polysilicon region, the polysilicon region being separated from the first substrate by a third dielectric layer;

at least a part of the polysilicon region is located on an active area within the first substrate.

2. The system of claim 1 wherein the plurality of source regions and the plurality of drain regions are located within the active area in the first substrate, the active area being adjacent to at least an isolation region in the first substrate.

3. The system of claim 1 wherein:

the second dielectric layer and the third dielectric layer are associated with the same composition and the same thickness;

the second gate and the polysilicon region are associated with the same composition and the same thickness.

4. The system of claim 1 wherein:

the polysilicon region is adjacent to a first doped region and a second doped region, the first doped region and the second doped region being associated with opposite charge polarities;

the second drain includes a third doped region and a fourth doped region, the third doped region and the fourth doped region being associated with opposite charge polarities.

5. The system of claim 4 wherein:

the first doped region and the third doped region are associated with the same doping profile;

the second doped region and the fourth doped region are associated with the same doping profile.

6. The system of claim 1 further comprising two or more polysilicon regions, the two or more polysilicon regions being separated from the first substrate by a plurality of dielectric layers.

7. The system of claim 6 wherein:

the two or more polysilicon regions are on one of the plurality of drain regions or one of the plurality of source regions;

the two or more polysilicon regions are not in direct contact with each other;

each of the two or more polysilicon regions is not in direct contact with anyone of the plurality of gate regions.

8. The system of claim 1 wherein, in a top view, the polysilicon region is at least partially located within the active area and surrounds the plurality of source regions and the plurality of drain regions, the top view being directed to a surface of the first substrate, the third dielectric layer being on the surface of the first substrate.

9. The system of claim 1 wherein the first substrate and the second substrate are the same substrate.

10. The system of claim 1 wherein:

the first dielectric layer and the second dielectric layer are associated with the same composition and the same thickness;

the first gate and the polysilicon region are associated with the same composition and the same thickness.