Microstructure device with an improved anchor
View Patent ↗The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.
1. A method of fabricating a microstructure device with an improved anchor, the method comprising:
providing a substrate;
forming an oxide layer on the substrate;
etching a cavity in the oxide layer, such that the cavity includes a sidewall in the oxide layer;
bonding a microstructure device layer to the oxide layer, over the cavity;
etching a trench in the device layer to define an outer boundary of a microstructure device, wherein the outer boundary is outside of the sidewall of the cavity; and
etching away the sidewall of the cavity through the trench in the device layer, thereby suspending the microstructure device over the cavity.
2. The method of claim 1 , further comprising forming an anchor in the device layer to support the microstructure device.
3. The method of claim 2 , wherein the etching away the sidewall of the cavity creates an undercut below the anchor in the oxide layer, the undercut being formed to have a length along the anchor that is less than one-half a length of the outer boundary of the microstructure.
4. The method of claim 1 , further comprising forming the microstructure device as a microelectromechanical system (MEMS) device.
5. The method of claim 1 , wherein the forming the oxide layer on the substrate includes forming the oxide layer as a silicon oxide layer.
6. The method of claim 5 , wherein the etching away the sidewall of the cavity through the trench includes etching the silicon oxide layer using a vapor or a wet etch process.
7. The method of claim 1 , further comprising hermetically sealing the microstructure device in a package.
8. A method of fabricating a microstructure device, the method comprising:
providing a substrate;
forming an oxide layer on the substrate;
etching a patterned cavity in the oxide layer, by forming a photoresist pattern on the oxide layer, wherein the pattern defines a sidewall around a perimeter of the cavity and a plurality of pillars within the cavity, which remain after the etching of the patterned cavity;
bonding a microstructure device layer to the oxide layer and the plurality of pillars, over the patterned cavity;
etching a trench in the device layer to define an outer boundary of a microstructure device, wherein the outer boundary is outside of the sidewall of the cavity; and
etching away the sidewall of the cavity and the plurality of pillars through the trench in the device layer, creating an open cavity, thereby suspending the microstructure device over the open cavity.
9. The method of claim 8 , further comprising forming an anchor in the device layer to support the microstructure device.
10. The method of claim 9 , wherein the etching away the sidewall of the cavity creates an undercut below the anchor in the oxide layer, the undercut being formed to have a length along the anchor that is less than one-half a length of the outer boundary of the microstructure.
11. The method of claim 8 , further comprising forming the microstructure device as a microelectromechanical system (MEMS) device.
12. The method of claim 8 , wherein the forming the oxide layer on the substrate includes forming the oxide layer as a silicon oxide layer.
13. The method of claim 12 , wherein the etching away the sidewall of the cavity through the trench includes etching the silicon oxide layer using a vapor or a wet etch process.
14. The method of claim 8 , further comprising hermetically sealing the microstructure device in a package.