IP Library › Granted Patent US 8,358,016
Granted Patent B2
US 8,358,016 · App. 13/418,845 · Granted Jan 22, 2013

Semiconductor package having an internal cooling system

Inventors: Min Suk Suh (Seoul, KR); Chang Jun Park (Gyeonggi-do, KR)
Assignee: Hynix Semiconductor Inc.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,358,016
App. No.
13/418,845
Granted
Jan 22, 2013
Kind
B2
Abstract

A semiconductor package having an internal cooling system is presented which includes a semiconductor chip and a through-electrode. The semiconductor chip has a circuit section. The through-electrode passes through an upper surface and a lower surface the semiconductor chip. The through-electrode is electrically connected with the circuit section of the semiconductor chip. The through-electrode also has a through-hole for allowing cooling fluid to flow therethrough.

Claims (44)

1. A semiconductor package comprising:

a substrate having

a chip region,

a peripheral region around the chip region, and

a path that extends from the chip region to the peripheral region;

a semiconductor chip module having a plurality of semiconductor chips stacked in the chip region separately from each other and defined with through-holes passing through the semiconductor chips and defined with cooling spaces between adjoining stacked semiconductor chips; and

a molding member covering side surfaces and an upper surface of the semiconductor chip module defining a connection path in fluid communications with the through-holes and cooling spaces defined by the stacked semiconductor chips and with the path of the substrate.

2. The semiconductor package according to claim 1 , wherein the substrate includes connection pads in the chip region, and the semiconductor chip module has through-electrodes that pass through the stacked semiconductor chips and are electrically connected to the connection pads.

3. The semiconductor package according to claim 2 , wherein any one of a gold layer and an insulation layer is formed on a side surface of the through-electrode to protect against corrosion of the through-electrode.

4. The semiconductor package according to claim 2 , wherein a through-electrode hole for forming the through-electrode has a diameter greater than a diameter of the through-hole.

5. The semiconductor package according to claim 1 , further comprising:

a first pipe fluidly connected to the connection path of the molding member;

a second pipe fluidly connected to the path of the substrate; and

a circulation pump fluidly connected to the first and second pipes, the circulation pump for circulating cooling fluid filled within the first and second pipes and the cooling spaces.

6. The semiconductor package according to claim 1 , further comprising:

adhesive sealing members adjacent to upper and lower surfaces of the stacked semiconductor chips and which are formed around the cooling spaces.

7. The semiconductor package according to claim 1 , wherein through-holes of a lower one of the stacked semiconductor chips which is placed downward among the stacked semiconductor chips and through-holes of an upper one of the semiconductor chips are aligned together to fluidly communicate with each other.

8. The semiconductor package according to claim 1 , further comprising adhesive sealing members formed along edges of upper surfaces and lower surfaces of the stacked semiconductor chips inhibit the molding member from flowing into the cooling spaces.

9. The semiconductor package according to claim 8 , wherein a height of the adhesive sealing member is about half or the same that of a distance between adjoining stacked semiconductor chips.

10. A semiconductor package comprising:

a substrate having

a chip region,

a peripheral region around the chip region, and

a path that extends from the chip region to the peripheral region;

a plurality of semiconductor chips stacked together forming cooling spaces between adjoining stacked semiconductor chips, wherein each semiconductor chip comprises:

an upper surface;

a lower surface;

through-holes that pass between the upper and lower surfaces, wherein through-holes and cooling spaces of the adjoining stacked semiconductor chips are in fluid communications with each other; and

through-electrodes that pass between the upper and lower surfaces, wherein through-electrodes of adjoining stacked semiconductor chips are in electrical communications with each other; and

a molding member covering stacked semiconductor chips such that the molding member defines a connection path in fluid communications with the through-holes and cooling spaces.

11. The semiconductor package according to claim 10 , further comprising:

a first pipe fluidly connected to the connection path of the molding member;

a second pipe fluidly connected to the path of the substrate; and

a circulation pump fluidly connected to the first and second pipes, the circulation pump for circulating cooling fluid filled within the first and second pipes, the cooling spaces and the through-holes.

12. The semiconductor package according to claim 11 , wherein the first and second pipes are disposed within the molding member.

13. The semiconductor package according to claim 10 , further comprising:

adhesive sealing members adjacent to upper and lower surfaces of the stacked semiconductor chips and which are formed around the cooling spaces.

14. The semiconductor package according to claim 10 , further comprising adhesive sealing members formed along edges of upper surfaces and lower surfaces of the stacked semiconductor chips that inhibit the molding member from flowing into the cooling spaces.

15. The semiconductor package according to claim 14 , wherein a height of the adhesive sealing member is about half or the same that of a distance between adjoining stacked semiconductor chips.

16. The semiconductor package according to claim 10 , further comprising:

connection pads electrically connected to through-electrodes of the semiconductor chips;

ball lands electrically connected to the connection pads; and

connection members electrically connected to the ball lands.

17. The semiconductor package according to claim 10 , wherein the through-electrodes contain electrically conductive material selected from the group consisting of copper, aluminum, silver, and alloys thereof.

Priority Claims (2)
KR 10-2009-0019114 · Mar 6, 2009 · national
KR 10-2009-0019180 · Mar 6, 2009 · national
Continuity (2)
Division 12639222 · Dec 16, 2009
Related Publication 20120175783A1 · Jul 12, 2012