Method of manufacturing SOI substrate

1. A manufacturing method comprising the steps of:

disposing a semiconductor layer in front of a semiconductor target; and

irradiating the layer with a rare gas ion so as to planarize the layer,

wherein the layer and the target are alternately irradiated with the rare gas ion.

2. The manufacturing method according to claim 1 ,

wherein the layer and the target comprise a same semiconductor material.

3. The manufacturing method according to claim 1 ,

wherein the layer is bonded to a substrate; and

wherein the target has a same structure and is made of same materials as an assemblage of the layer and the substrate.

4. The manufacturing method according to claim 1 , wherein the manufacturing method is for manufacturing an electronic appliance.

5. A method for manufacturing an SOI substrate, the method comprising the steps of:

irradiating a semiconductor bond substrate with an accelerated ion so as to form an embrittlement region in the bond substrate;

forming an electrically insulating layer on a surface of one of the bond substrate and a base substrate;

bonding the bond substrate to the base substrate, the insulating layer being positioned between the bond substrate and the base substrate;

splitting the bond substrate along the embrittlement region so as to leave a semiconductor layer bonded to the base substrate;

disposing the base substrate in front of a target, the semiconductor layer being positioned between the base substrate and the target; and

irradiating alternately the semiconductor layer and the target with a rare gas ion so as to planarize the semiconductor layer.

6. The method for manufacturing an SOI substrate according to claim 5 ,

wherein the semiconductor layer and the target comprise a same semiconductor material.

7. The method for manufacturing an SOI substrate according to claim 5 ,

wherein the target is a semiconductor target.

8. The method for manufacturing an SOI substrate according to claim 5 ,

wherein the target has a same structure and is made of same materials as an assemblage of the semiconductor layer and the base substrate.

9. A method for reprocessing a semiconductor bond substrate, the method comprising the steps of:

irradiating the semiconductor bond substrate with an accelerated ion so as to form an embrittlement region in the bond substrate;

splitting the bond substrate along the embrittlement region;

disposing, after splitting, the bond substrate in front of a target; and

irradiating alternately the bond substrate and the target with a rare gas ion so as to planarize a surface of the bond substrate.

10. The method for reprocessing a semiconductor bond substrate according to claim 9 ,

wherein the bond substrate and the target comprise a same semiconductor material.

11. The method for reprocessing a semiconductor bond substrate according to claim 9 ,

wherein the target is a semiconductor target.

12. The method for reprocessing a semiconductor bond substrate according to claim 9 ,

wherein the target has a same structure and is made of same materials as the bond substrate.

13. A method for manufacturing an SOI substrate comprising the steps of:

irradiating a bond substrate with an accelerated ion, so that an embrittlement region is formed in the bond substrate;

forming an insulating layer over a surface of the bond substrate or a surface of a base substrate;

bonding the bond substrate and the base substrate with the insulating layer positioned therebetween;

splitting the bond substrate at the embrittlement region by a heat treatment, so that a semiconductor layer is formed over the base substrate;

disposing the semiconductor layer provided over the base substrate and a semiconductor target containing the same semiconductor material as the semiconductor layer so that a surface of the semiconductor layer provided over the base substrate and the semiconductor target face each other; and

alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized.

14. The method for manufacturing the SOI substrate according to claim 13 ,

wherein the semiconductor target is a bond substrate after a split.

15. A method for manufacturing an SOI substrate comprising the steps of:

irradiating a bond substrate with an accelerated ion, so that an embrittlement region is formed in the bond substrate;

forming an insulating layer over a surface of the bond substrate or a surface of a base substrate;

bonding the bond substrate and the base substrate with the insulating layer positioned therebetween;

splitting the bond substrate at the embrittlement region by a heat treatment, so that a semiconductor layer is formed over the base substrate;

disposing the semiconductor layer provided over the base substrate and a semiconductor layer provided over another base substrate of the same structure so that a surface of the semiconductor layer provided over the base substrate and a surface of the semiconductor layer provided over the another base substrate face each other; and

alternately irradiating the surface of the semiconductor layer and the surface of the semiconductor layer provided over the another base substrate with a rare gas ion, so that the surfaces of the semiconductor layers are planarized.

16. A method for reprocessing a bond substrate comprising the steps of:

irradiating a bond substrate with an accelerated ion, so that an embrittlement region is formed in the bond substrate;

forming an insulating layer over a surface of the bond substrate or a surface of a base substrate;

bonding the bond substrate and the base substrate with the insulating layer positioned therebetween;

splitting the bond substrate at the embrittlement region by a heat treatment, so that a semiconductor layer is formed over the base substrate;

disposing the bond substrate after the split and a semiconductor target containing the same semiconductor material as the bond substrate so that a surface of the bond substrate after the split and the semiconductor target face each other; and

alternately irradiating the surface of the bond substrate and the semiconductor target with a rare gas ion, so that the surface of the bond substrate is planarized.