Area sensor and display apparatus provided with an area sensor
An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.
1. A semiconductor device comprising:
a substrate;
a pixel over the substrate, the pixel comprising a electroluminescence element and a transistor comprising a source or a drain electrically connected to the electroluminescence element; and
a photodiode over the substrate, the photodiode comprising a P-type semiconductor layer, a photoelectric conversion layer, and an N-type semiconductor layer, the photoelectric conversion layer being formed from a film distinct from a film used to form the P-type semiconductor layer or the N-type semiconductor layer, and being formed in a same plane as the P-type semiconductor layer and the N-type semiconductor layer,
wherein the transistor of the pixel comprises a semiconductor layer including a same material as the N-type semiconductor layer and the P-type semiconductor layer of the photodiode.
2. A semiconductor device comprising:
a substrate;
a plurality of pixels over the substrate, each pixel comprising a electroluminescence element and a transistor comprising a source or a drain electrically connected to the electroluminescence element; and
a photodiode over the substrate, the photodiode comprising a P-type semiconductor layer, a photoelectric conversion layer, and an N-type semiconductor layer, the photoelectric conversion layer being formed from a film distinct from a film used to form the P-type semiconductor layer or the N-type semiconductor layer, and being formed in a same plane as the P-type semiconductor layer and the N-type semiconductor layer,
wherein the transistors of the plurality of pixels comprise semiconductor layers including a same material as the N-type semiconductor layer and the P-type semiconductor layer of the photodiode.
3. A semiconductor device comprising:
a substrate;
a pixel over the substrate, the pixel comprising a electroluminescence element and a transistor comprising a source or a drain electrically connected to the electroluminescence element; and
a photodiode over the substrate, the photodiode comprising a P-type semiconductor layer, a photoelectric conversion layer, and an N-type semiconductor layer, the photoelectric conversion layer being formed from a film distinct from a film used to form the P-type semiconductor layer or the N-type semiconductor layer, and being formed in a same plane as the P-type semiconductor layer and the N-type semiconductor layer,
wherein the transistor of the pixel comprises a semiconductor layer including a same material as the N-type semiconductor layer and the P-type semiconductor layer of the photodiode; and
wherein the electroluminescence element of the pixel and the photodiode do no overlap when seen from above the substrate.
4. A semiconductor device comprising:
a substrate;
a pixel over the substrate, the pixel comprising a electroluminescence element and a transistor comprising a source or a drain electrically connected to the electroluminescence element;
a current source; and
a photodiode the substrate, the photodiode comprising a P-type semiconductor layer, a photoelectric conversion layer, and an N-type semiconductor layer, the photodiode being electrically connected to the current source, the photoelectric conversion layer being formed from a film distinct from a film used to form the P-type semiconductor layer or the N-type semiconductor layer, and being formed in a same plane as the P-type semiconductor layer and the N-type semiconductor layer,
wherein the transistor of the pixel comprises a semiconductor layer including a same material as the N-type semiconductor layer and the P-type semiconductor layer of the photodiode.
5. A semiconductor device according to claim 1 , wherein the semiconductor layer of the transistor, the N-type semiconductor layer, and the P-type semiconductor layer are made from a same semiconductor film.
6. A semiconductor device according to claim 2 , wherein the semiconductor layers of the transistors, the N-type semiconductor layer, and the P-type semiconductor layer are made from a same semiconductor film.
7. A semiconductor device according to claim 3 , wherein the semiconductor layer of the transistor, the N-type semiconductor layer, and the P-type semiconductor layer are made from a same semiconductor film.
8. A semiconductor device according to claim 4 , wherein the semiconductor layer of the transistor, the N-type semiconductor layer, and the P-type semiconductor layer are made from a same semiconductor film.
9. A semiconductor device according to claim 1 ,
further comprising a constant current source,
wherein the photodiode is connected to the constant current source.
10. A semiconductor device according to claim 2 , further comprising a current source electrically connected to the photodiode.
11. A semiconductor device according to claim 3 , further comprising a current source electrically connected to the photodiode.
12. A semiconductor device according to claim 10 , wherein the current source is a constant current source.
13. A semiconductor device according to claim 11 , wherein the current source is a constant current source.
14. A semiconductor device according to claim 1 , wherein the substrate is selected from the group consisting of an elastic plastic film, a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, and a ceramic substrate.
15. A semiconductor device according to claim 2 , wherein the substrate is selected from the group consisting of an elastic plastic film, a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, and a ceramic substrate.
16. A semiconductor device according to claim 3 , wherein the substrate is selected from the group consisting of an elastic plastic film, a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, and a ceramic substrate.
17. A semiconductor device according to claim 4 , wherein the substrate is selected from the group consisting of an elastic plastic film, a glass substrate, a quartz substrate, a plastic substrate, a silicon substrate, and a ceramic substrate.
18. A semiconductor device according to claim 1 , wherein the semiconductor device is an electronic equipment selected from a group consisting of a video camera, a digital still camera, a notebook computer, a mobile computer, a mobile phone, a portable game machine and an electronic book.
19. A semiconductor device according to claim 2 wherein the semiconductor device is an electronic equipment selected from a group consisting of a video camera, a digital still camera, a notebook computer, a mobile computer, a mobile phone, a portable game machine and an electronic book.
20. A semiconductor device according to claim 3 wherein the semiconductor device is an electronic equipment selected from a group consisting of a video camera, a digital still camera, a notebook computer, a mobile computer, a mobile phone, a portable game machine and an electronic book.
21. A semiconductor device according to claim 4 wherein the semiconductor device is an electronic equipment selected from a group consisting of a video camera, a digital still camera, a notebook computer, a mobile computer, a mobile phone, a portable game machine and an electronic book.