Semiconductor light-emitting device
Such a semiconductor light-emitting device ( 10, 30, 40 ) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element ( 1, 31 ) and a thin-film light diffusion portion ( 8, 8 a , 38, 41 ) arranged on a light-emitting direction side of the semiconductor light-emitting element.
1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element;
a thin-film light diffusion portion arranged on a light-emitting direction side of said semiconductor light-emitting element; and
a wavelength conversion portion containing a phosphor, wherein
said wavelength conversion portion is formed into a sheet, and said light diffusion portion is formed only on the upper surface or only on the back surface of said wavelength conversion portion,
a space is formed between said light diffusion portion and said semiconductor light-emitting element.
2. The semiconductor light-emitting device according to claim 1 , wherein
said thin-film light diffusion portion includes a plurality of islandlike light diffusion portions.
3. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element;
a resin portion arranged on a light-emitting direction side of said a semiconductor light-emitting element;
a wavelength conversion portion containing a phosphor arranged on said light-emitting direction side of said resin portion; and
a thin-film light diffusion portion arranged only at an interface between said resin portion and said wavelength conversion portion, wherein
said thin-film light diffusion portion is composed of a plurality of islandlike light diffusion portions.
4. The semiconductor light-emitting device according to claim 3 , wherein
said islandlike light diffusion portions have convex curved surfaces toward said light-emitting direction.
5. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion is formed in such a shape that a single layer is separated into a plurality of islands.
6. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion is formed by vapor phase deposition.
7. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion is arranged separately from said semiconductor light-emitting element.
8. The semiconductor light-emitting device according to claim 3 , further comprising a wavelength conversion portion containing a phosphor.
9. The semiconductor light-emitting device according to claim 8 , wherein
said wavelength conversion portion is formed into a sheet, and
said light diffusion portion is formed on the upper surface or on the back surface of said wavelength conversion portion.
10. The semiconductor light-emitting device according to claim 8 , wherein
said light diffusion portion is provided between said wavelength conversion portion and said semiconductor light-emitting element.
11. The semiconductor light-emitting device according to claim 8 , wherein
said light diffusion portion has a thickness smaller than the thickness of said wavelength conversion portion.
12. The semiconductor light-emitting device according to claim 3 , wherein
said semiconductor light-emitting element is arranged in a mirror-finished frame.
13. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion includes an aluminum thin film.
14. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion includes a titanium oxide thin film.
15. The semiconductor light-emitting device according to claim 3 , wherein
said resin has a surface formed in a corrugated shape, and
said light diffusion portion is arranged on the surface of said corrugated shape of said resin.
16. The semiconductor light-emitting device according to claim 15 , wherein
said light diffusion portion is formed in a plurality of recess portions of said corrugated shape of said resin in the form of islands.
17. The semiconductor light-emitting device according to claim 3 , wherein
said light diffusion portion is formed in a manner convexly bent toward said light-emitting direction to cover said semiconductor light-emitting element.
18. The semiconductor light-emitting device according to claim 3 , having a space between said light diffusion portion and said semiconductor light-emitting element.