Semiconductor equipment and method of manufacturing the same

1. A semiconductor equipment comprising:

a sealed container;

a stem connected to said sealed container via a stem peripheral portion; and

a semiconductor device mounted on a top surface of said stem, inside said sealed container,

wherein said semiconductor device is electrically connected to a lead provided to said stem,

said stem peripheral portion is bonded along a periphery of said stem, said stem peripheral portion being made of a material that is different from a material of said stem and the same as a material of said sealed container,

said stem peripheral portion and said sealed container are connected by welding,

said sealed container is filled with a working fluid which is any one of a mixed solution of ethanol and perfluorooctane, a mixed solution of ethanol and perfluorobutyl tetrahydrofuran, and a mixed solution of ethanol and ethoxynonafluorobutane, and

the top surface of said stem on which said semiconductor device is mounted has a concave shape.

2. The semiconductor equipment according to claim 1 ,

wherein the mixed solution of ethanol and perfluorooctane consists of 90 percent ethanol and 10 percent perfluorooctane.

3. The semiconductor equipment according to claim 1 ,

wherein the mixed solution of ethanol and perfluorobutyl tetrahydrofuran consists of 70 percent ethanol and 30 percent perfluorobutyl tetrahydrofuran.

4. The semiconductor equipment according to claim 1 ,

wherein the mixed solution of ethanol and ethoxynonafluorobutane consists of 95 percent ethanol and 5 percent ethoxynonafluorobutane.

5. A semiconductor equipment comprising:

a sealed container;

a stem connected to said sealed container via a stem peripheral portion; and

a semiconductor device mounted on a top surface of said stem, inside said sealed container,

wherein said semiconductor device is electrically connected to a lead provided to said stem,

said stem peripheral portion is bonded along a periphery of said stem, said stem peripheral portion being made of a material that is different from a material of said stem and the same as a material of said sealed container,

said stem peripheral portion and said sealed container are connected by welding,

said sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether,

said lead is placed inside a lead hole formed in said stem,

said lead has a smaller diameter at a bottom-side of said stem than at a top-side of said stem, and

said lead hole has a smaller diameter at a bottom-side of said stem than at a top-side of said stem.

6. A semiconductor equipment comprising:

a sealed container;

a stem connected to said sealed container via a stem peripheral portion; and

a semiconductor device mounted on a top surface of said stem, inside said sealed container,

wherein said semiconductor device is electrically connected to a lead provided to said stem,

said stem peripheral portion is bonded along a periphery of said stem, said stem peripheral portion being made of a material that is different from a material of said stem and the same as a material of said sealed container,

said stem peripheral portion and said sealed container are connected by welding,

said sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether, and

when pressure inside said sealed container is represented by P (MPa) and volume by V (m 3 ), a value of P×V is equal to or less than 0.004.

7. The semiconductor equipment according to claim 1 ,

wherein said stem peripheral portion is connected to a bottom portion of said stem by brazing so as to be coplanar with the bottom portion.

8. The semiconductor equipment according to claim 5 ,

wherein said stem peripheral portion is connected to a bottom portion of said stem by brazing so as to be coplanar with the bottom portion.

9. The semiconductor equipment according to claim 6 ,

wherein said stem peripheral portion is connected to a bottom portion of said stem by brazing so as to be coplanar with the bottom portion.

10. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device is connected to said lead using bonding wire, and

said semiconductor device and the bonding wire are covered with a passivation film.

11. The semiconductor equipment according to claim 5 ,

wherein said semiconductor device is connected to said lead using bonding wire, and

said semiconductor device and the bonding wire are covered with a passivation film.

12. The semiconductor equipment according to claim 6 ,

wherein said semiconductor device is connected to said lead using bonding wire, and

said semiconductor device and the bonding wire are covered with a passivation film.

13. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device is flip-chip mounted on said stem.

14. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device is connected onto said stem using a conductive resin.

15. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device is made of a semiconductor that includes a nitride semiconductor or silicon carbide or diamond.

16. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device includes a hetero semiconductor thin film formed on a sapphire substrate or a silicon substrate.

17. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device includes, in a surface of said semiconductor device, an aluminum nitride film or a polycrystalline diamond film.

18. The semiconductor equipment according to claim 1 ,

wherein said semiconductor device, the bonding wire, and said stem include an insulating dielectric film in a surface of said semiconductor device, the bonding wire, and said stem.

19. The semiconductor equipment according to claim 14 ,

wherein said insulating dielectric film is made of aluminum nitride or diamond.