Method of stacking semiconductor chips including forming an interconnect member and a through electrode

1. A method of manufacturing a semiconductor device, said method comprising:

forming an interconnect member on a supporting substrate;

mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on said interconnect member;

filling an opening between the interconnect member and the first semiconductor chip with an underfill resin, said underfill resin being disposed to cover a side surface of said first semiconductor chip;

forming a resin layer on said interconnect member to cover the side surface of said first semiconductor chip via said underfill resin;

thinning said first semiconductor chip and said resin layer;

forming an inorganic insulating layer on a back surface of said first semiconductor chip so as to be in contact with said back surface and to extend over said resin layer;

forming a through electrode so as to penetrate said inorganic insulating layer and said semiconductor substrate; and

removing said supporting substrate after said forming of said through electrode,

wherein said supporting substrate comprises a device wafer comprising a silicon substrate,

wherein said removing said supporting substrate comprises removing an entirety of said supporting substrate to expose a lower surface of the interconnect member.

2. The method according to claim 1 , further comprising mounting a second semiconductor chip in a face-down manner on said inorganic insulating layer so as to be electrically connected to said through electrode.

3. The method according to claim 2 , wherein said mounting of said second semiconductor chip includes mounting a plurality of semiconductor chips as said second semiconductor chip in a same layer.

4. The method according to claim 2 , wherein said mounting of said second semiconductor chip includes disposing a dummy chip, which comprises a chip where no semiconductor element is formed, in a same layer as said second semiconductor chip.

5. The method according to claim 1 , further comprising:

forming an insulating ring in said semiconductor substrate to surround a region where said through electrode is to be formed, before said mounting of said first semiconductor chip.

6. The method according to claim 1 , wherein said mounting of said first semiconductor chip includes mounting a plurality of semiconductor chips as said first semiconductor chip in a same layer.

7. The method according to claim 1 , wherein said mounting of said first semiconductor chip includes disposing a dummy chip, which comprises a chip where no semiconductor element is formed, in a same layer as said first semiconductor chip.

8. The method according to claim 4 , wherein said dummy chip is disposed so as to be spaced apart from a side surface of said semiconductor device.

9. The method according to claim 1 , further comprising:

forming an external electrode terminal on a surface of said interconnect member where said supporting substrate has been disposed, after said removing of said supporting substrate.

10. The method according to claim 1 , wherein said method further comprises forming an external electrode terminal on a surface of said first semiconductor chip after said forming of said through electrode.

11. The method according to claim 10 , further comprising:

mounting a second semiconductor chip in a face-down manner on said inorganic insulating layer so as to be electrically connected to said through electrode;

forming a resin on said inorganic insulating film so as to cover said second semiconductor chip; and

forming a via in said resin,

wherein said forming of said external electrode terminal is conducted after said forming of said via, and

wherein said external electrode terminal is electrically connected to said through electrode through said via.

12. The method according to claim 10 , further comprising:

forming a conductor post on said inorganic insulating film;

mounting a second semiconductor chip in a face-down manner on said inorganic insulating layer so as to be electrically connected to said through electrode;

forming a resin on said inorganic insulating film so as to cover said conductor post and said second semiconductor chip; and

grinding said resin until said conductor post is exposed,

wherein said forming of said external electrode terminal is conducted after said grinding of said resin, and

wherein said external electrode terminal is electrically connected to said through electrode through said conductor post.

13. The method according to claim 10 , further comprising:

mounting a second semiconductor chip in a face-down manner on said inorganic insulating layer so as to be electrically connected to said through electrode;

forming a resin on said inorganic insulating film so as to cover said second semiconductor chip;

adhering an adhesive layer on said resin, said adhesive layer having a larger area than an area of said resin; and

forming a via in said adhesive layer and said resin,

wherein said forming of said external electrode terminal is conducted after said forming of said via, and

wherein said external electrode terminal is electrically connected to said through electrode through said via.

14. The method according to claim 10 , further comprising:

mounting a silicon interposer having a silicon substrate on an inorganic insulating film so as to be electrically connected to said through electrode;

forming a second inorganic insulating film on said silicon interposer; and

forming a second through electrode so as to penetrate said second inorganic insulating layer and said silicon substrate,

wherein said forming of said external electrode terminal is conducted after said forming of said second through electrode, and

wherein said external electrode terminal is electrically connected to said through electrode of said first semiconductor chip through said second through electrode.

15. The method according to claim 14 , further comprising:

mounting a second semiconductor chip in a face-down manner on said second inorganic insulating layer so as to be electrically connected to said second through electrode;

forming a resin on said second inorganic insulating film so as to cover said second semiconductor chip; and

forming a via in said resin,

wherein said forming of said external electrode terminal is conducted after said forming of said via, and

wherein said external electrode terminal is electrically connected to said through electrode of said first semiconductor chip through said second through electrode and said via.

16. The method according to claim 14 , further comprising:

forming a resin on said second inorganic insulating film without mounting a semiconductor chip; and

forming a via in said resin,

wherein said forming of said external electrode terminal is conducted after said forming of said via, and

wherein said external electrode terminal is electrically connected to said through electrode of said first semiconductor chip through said second through electrode and said via.

17. The method according to claim 14 , wherein said silicon interposer is mounted to collectively cover an upper portion of a plurality of said first semiconductor chips.

18. The method according to claim 1 , wherein said forming of said through electrode includes forming a through hole that penetrates said inorganic insulating layer and said semiconductor substrate, and filling said through hole with a metal, and

wherein in said filling of said through hole, a seed metal is formed in an inside of said through hole and on said inorganic insulating layer by a sputtering method or a chemical vapor deposition (CVD) method, and thereafter, electrolytic plating is carried out, and a metal formed on said inorganic insulating layer by said electrolytic plating is removed by chemical-mechanical polishing (CMP).

19. The method according to claim 1 , wherein said forming of said through electrode includes forming a through hole that penetrates said inorganic insulating layer and said semiconductor substrate, and filling said through hole with a metal, and

wherein in said filling of said through hole, a seed metal is formed in an inside of said through hole and on said inorganic insulating layer by a sputtering method, and said seed metal formed on places other than a bottom surface of said through hole is removed, and thereafter, electroless plating is carried out.

20. The method according to claim 1 , wherein the underfill resin is disposed on an upper surface of the first semiconductor chip.

21. The method according to claim 20 , wherein the underfill resin is further disposed between said side surface of the first semiconductor chip and a side surface of said resin layer.

22. The method according to claim 1 , wherein said forming the inorganic insulating layer comprises forming a SiO 2 film on a SiN film.

23. The method according to claim 1 , further comprising forming an insulating ring in said semiconductor substrate to surround said through electrode within the first semiconductor chip.

24. The method according to claim 1 , wherein an upper surface of said resin layer is co-planar with the back surface of the first semiconductor chip such that said inorganic insulating layer extends over said first semiconductor chip and said resin layer in a continues straight line.

25. The method according to claim 1 , wherein said forming the interconnect member comprises:

disposing a seed metal layer on said supporting substrate; and

electrolytic plating the seed metal layer to form the interconnect member.