Solid state lighting devices with point contacts and associated methods of manufacturing
Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes an insulative material on the first semiconductor material, the insulative material including a plurality of openings having a size of about 1 nm to about 20 μm, and a conductive material having discrete portions in the individual openings.
1. A solid state lighting (SSL) device, comprising:
an SSL structure having a first surface and a second surface opposite the first surface;
a first electrical terminal on the first surface, the first electrical terminal including
a plurality of discrete point contacts spaced apart from one another and contacting the SSL structure, the individual point contacts having a size of about 1 nm to about 20 μm, and
an interconnect electrically connecting at least a portion of the plurality of discrete point contacts;
an insulative material on the first surface, portions of the insulative material separating adjacent point contacts;
a second electrical terminal on the second surface of the SSL structure;
the insulative material includes a plurality of insulative pads separated from one another by individual point contacts; and
the interconnect includes an elongated structure that electrically connects at least a portion of the plurality of point contacts.
2. A solid state lighting (SSL) device, comprising:
a first semiconductor material having a first surface;
a second semiconductor material spaced apart from the first semiconductor material, the second semiconductor material having a second surface;
an active region between the first and second semiconductor materials, wherein the first and second surfaces are spaced apart from the active region;
a first electrical terminal on the first surface and contacting the first semiconductor material, the first electrical terminal including:
a plurality of discrete point contacts spaced apart from one another, the individual point contacts having a size of about 1 nm to about 20 μm; and
an interconnect electrically connecting the plurality of discrete point contacts; and
a second electrical terminal on the second semiconductor material, the second electrical terminal being separated from the first electrical terminal by the second semiconductor material, the active region, and the first semiconductor material;
a plurality of insulative pads on the first semiconductor material;
the point contacts individually include a bump extending from the first semiconductor material; and
adjacent pairs of the bumps are separated from one another by one of the corresponding insulative pads.
3. The SSL device of claim 2 wherein:
the first semiconductor material includes a P-type gallium nitride (GaN) material;
the second semiconductor material includes an N-type GaN material;
the active region includes at least one of a bulk indium gallium nitride (InGaN) material, an InGaN single quantum well (“SQW”), and GaN/InGaN multiple quantum wells (“MQWs”); and
the interconnect includes an elongated structure that electrically connects at least some of the plurality of point contacts.
4. The SSL device of claim 2 wherein:
the bumps extend from the first semiconductor material toward the interconnect.
5. The SSL device of claim 2 wherein:
the interconnect includes an elongated structure that electrically connects at least some of the plurality of bumps.
6. A solid state lighting (SSL) device, comprising:
a first semiconductor material having a first surface;
a second semiconductor material spaced apart from the first semiconductor material, the second semiconductor material having a second surface;
an active region between the first and second semiconductor materials, wherein the first and second surfaces are spaced apart from the active region;
an insulative material on the first semiconductor material, the insulative material including a plurality of openings having a size of about 1 nm to about 20 μm, wherein the openings individually expose a portion of the first semiconductor material;
a conductive material having discrete portions in the individual openings, wherein the discrete portions of the conductive material contact the first semiconductor material at the first surface to form at least a portion of a first electrical terminal; and
a second electrical terminal on the second semiconductor material, the second electrical terminal being separated from the first electrical terminal by the second semiconductor material, the active region, and the first semiconductor material;
wherein the insulative material includes a plurality of pads separated from one another by one of the corresponding openings.
7. A device, comprising:
a solid state lighting (SSL) structure including an active region between a first semiconductor material and a second semiconductor material, the SSL structure having a first surface at the first semiconductor material and a second surface at the second semiconductor material, the first surface being opposite the second surface;
a first electrical terminal on the first surface of the SSL structure, the first electrical terminal including:
a plurality of discrete point contacts spaced apart from one another and directly contacting the first semiconductor material, the individual point contacts having a size of about 1 nm to about 20 μm; and
an interconnect electrically connecting the plurality of discrete point contacts; and
a second electrical terminal on the second semiconductor material, the second electrical terminal being separated from the first electrical terminal by the second semiconductor material, the active region, and the first semiconductor material;
the device further includes a plurality of insulative pads on the first semiconductor material;
the point contacts individually include a bump extending from the first semiconductor material; and
adjacent pairs of the bumps are separated from one another by one of the corresponding insulative pads.
8. The device of claim 7 wherein:
the first semiconductor material includes a P-type gallium nitride (GaN) material;
the second semiconductor material includes an N-type GaN material;
the interconnect includes an elongated structure that electrically connects at least some of the plurality of point contacts.