In-chamber member temperature control method, in-chamber member, substrate mounting table and plasma processing apparatus including same
In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.
1. A method of controlling the temperature of an in-chamber member for use in a plasma processing apparatus that processes a target substrate with a plasma, comprising:
providing the in-chamber member with a plurality of power-feeding portions;
pressing a terminal of each of the power-feeding portions against the in-chamber member by a pressing mechanism;
heating the in-chamber member by supplying electric power thereto through the power-feeding portions;
measuring a resistance value or a resistivity of the in-chamber member; and
controlling the electric power based on the temperature of the in-chamber member estimated from the resistance value or the resistivity,
wherein the in-chamber member includes one or more annular members arranged around the target substrate, and
wherein an electric current is controlled to uniformly flow through the in-chamber member by supplying electric power thereto through the pressed terminal of each of the power-feeding portions.
2. The method of claim 1 , wherein the annular member is of an open loop shape with the power-feeding portions provided at its opposite ends or is divided into two bodies which have the power-feeding portions at their opposite ends.
3. A method of controlling the temperature of an in-chamber member for use in a plasma processing apparatus that processes a target substrate with a plasma, comprising:
providing the in-chamber member with a plurality of power-feeding portions;
pressing a terminal of each of the power-feeding portions against the in-chamber member by a pressing mechanism;
heating the in-chamber member by supplying electric power thereto through the power-feeding portions;
measuring a resistance value or a resistivity of the in-chamber member; and
controlling the electric power based on the temperature of the in-chamber member estimated from the resistance value or the resistivity,
wherein the in-chamber member is a member making contact with the plasma within a chamber and existing near the target substrate, and
wherein an electric current is controlled to uniformly flow through the in-chamber member by supplying electric power thereto through the pressed terminal of each of the power-feeding portions.
4. A method of controlling the temperature of an in-chamber member for use in a plasma processing apparatus that processes a target substrate with a plasma, comprising:
providing the in-chamber member with a plurality of power-feeding portions;
pressing a terminal of each of the power-feeding portions against the in-chamber member by a pressing mechanism;
heating the in-chamber member by supplying electric power thereto through the power-feeding portions;
measuring a resistance value or a resistivity of the in-chamber member; and
controlling the electric power based on the temperature of the in-chamber member estimated from the resistance value or the resistivity,
wherein an electric current is controlled to uniformly flow through the in-chamber member and to heat the in-chamber member with in-plane temperature uniformity by feeding electric power sequentially to selected pairs of the power-feeding portions, and repeatedly on a one pair at a time basis.