Pitch multiplied mask patterns for isolated features
Crisscrossing spacers formed by pitch multiplication are used to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of spacers are formed around each of the mandrels. A second plurality of mandrels is formed on a second level above the first level. The second plurality of mandrels is formed so that they cross the first plurality of mandrels, when viewed in a top down view. A second plurality of spacers is formed around each of the second plurality of mandrels. The first and the second mandrels are selectively removed to leave a pattern of voids defined by the crisscrossing first and second pluralities of spacers. These spacers can be used as a mask to transfer the pattern of voids to a substrate. The voids can be filled with conductive material to form conductive contacts.
1. A partially fabricated integrated circuit, comprising:
a first plurality of elongated spacers over a substrate; and
a second plurality of elongated spacers over the first plurality of spacers, wherein, in a top down view of the partially fabricated integrated circuit, spacers of the first plurality of spacers cross spacers of the second plurality of spacers,
wherein spacers of the first and the second pluralities of spacers have a pitch of about 100 nm or less.
2. The partially fabricated integrated circuit of claim 1 , wherein the first plurality of spacers are vertically separated from the second plurality of spacers.
3. The partially fabricated integrated circuit of claim 2 , wherein the second plurality of spacers are disposed on a planarization layer extending over the first plurality of spacers.
4. The partially fabricated integrated circuit of claim 3 , wherein the planarization layer extends between and over the first plurality of spacers.
5. The partially fabricated integrated circuit of claim 3 , wherein the planarization layer is formed of a reflowable material.
6. The partially fabricated integrated circuit of claim 3 , further comprising a hardmask layer underlying the first plurality of spacers.
7. The partially fabricated integrated circuit of claim 6 , wherein the planarization layer and the hardmask layer are formed of a same material.
8. The partially fabricated integrated circuit of claim 3 , wherein the planarization layer is formed of amorphous carbon.
9. The partially fabricated integrated circuit of claim 1 , wherein pairs of neighboring spacers of the first plurality of spacers define closed loops.
10. The partially fabricated integrated circuit of claim 9 , wherein pairs of neighboring spacers of the second plurality of spacers define closed loops.
11. The partially fabricated integrated circuit of claim 10 , wherein each closed loop defined by spacers of the second plurality of spacers cross multiple closed loops defined by spacers of the first plurality of spacers.
12. The partially fabricated integrated circuit of claim 9 , wherein spacers of each pair of neighboring spacers of the first plurality of spacers are substantially parallel to one another.
13. The partially fabricated integrated circuit of claim 1 , wherein spacers of the first plurality of spacers are substantially uniformly spaced apart across the substrate.
14. The partially fabricated integrated circuit of claim 13 , wherein spacers of the second plurality of spacers are substantially uniformly spaced apart across the substrate.
15. The partially fabricated integrated circuit of claim 1 , wherein spacers of the first and the second pluralities of spacers have widths of about 20-80 nm.
16. The partially fabricated integrated circuit of claim 1 , further comprising a dielectric layer underlying the first plurality of spacers.
17. The partially fabricated integrated circuit of claim 1 , wherein the dielectric layer includes a plurality of voids aligned with openings delimited by the first and the second plurality of spacers.
18. The partially fabricated integrated circuit of claim 17 , wherein spacers of the first plurality of elongated spacers comprise silicon.
19. The partially fabricated integrated circuit of claim 18 , wherein spacers of the second plurality of elongated spacers comprise an oxide.
20. The partially fabricated integrated circuit of claim 1 , wherein the partially fabricated integrated circuit is a partially fabricated memory device.
21. The partially fabricated integrated circuit of claim 1 , wherein spacers of the second plurality of spacers cross multiple pairs of spacers of the first plurality of spacers.
22. A partially fabricated integrated circuit, comprising:
a first plurality of elongated spacers over a substrate; and
a second plurality of elongated spacers over the first plurality of spacers, wherein, in a top down view of the partially fabricated integrated circuit, spacers of the first plurality of spacers cross spacers of the second plurality of spacers,
wherein the first plurality of spacers are vertically separated from the second plurality of spacers,
wherein the second plurality of spacers are disposed on a planarization layer extending over the first plurality of spacers, and
wherein the planarization layer is formed of a reflowable material.
23. A partially fabricated integrated circuit, comprising:
a first plurality of elongated spacers over a substrate; and
a second plurality of elongated spacers over the first plurality of spacers, wherein, in a top down view of the partially fabricated integrated circuit, spacers of the first plurality of spacers cross spacers of the second plurality of spacers,
wherein the first plurality of spacers are vertically separated from the second plurality of spacers,
wherein the second plurality of spacers are disposed on a planarization layer extending over the first plurality of spacers, and
wherein the planarization layer is formed of amorphous carbon.
24. A partially fabricated integrated circuit, comprising:
a first plurality of elongated spacers over a substrate; and
a second plurality of elongated spacers over the first plurality of spacers, wherein, in a top down view of the partially fabricated integrated circuit, spacers of the first plurality of spacers cross spacers of the second plurality of spacers,
wherein spacers of the first and the second pluralities of spacers have widths of about 20-80 nm.