TSVs with different sizes in interposers for bonding dies
View Patent ↗A device includes an interposer including a substrate having a top surface and a bottom surface. A plurality of through-substrate vias (TSVs) penetrates through the substrate. The plurality of TSVs includes a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension. An interconnect structure is formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs.
1. A device comprising:
an interposer comprising a substrate having a top surface and a bottom surface, wherein the interposer is substantially free from integrated circuit devices formed therein;
a plurality of through-substrate vias (TSVs) penetrating through the substrate, wherein the plurality of TSVs comprises a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension; and
a first interconnect structure formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs.
2. The device of claim 1 , wherein the first horizontal dimension is greater than the second horizontal dimension of the second TSV.
3. The device of claim 2 , wherein a ratio of the first horizontal dimension to the second horizontal dimension is greater than about 1.5.
4. The device of claim 1 , wherein the first length is greater than the second length.
5. The device of claim 1 further comprising:
a first die overlying the first interconnect structure; and
a second die underlying the bottom surface of the substrate and electrically coupled to the second TSV.
6. The device of claim 5 , wherein the second die is bonded to the second TSV.
7. The device of claim 5 further comprising a molding compound underlying the bottom surface of the substrate, wherein the first TSV extends to penetrate the molding compound.
8. The device of claim 7 , wherein the second die is formed in the molding compound.
9. The device of claim 8 further comprising a metal bump on a bottom surface of the molding compound and electrically coupled to the first TSV.
10. The device of claim 7 further comprising a second interconnect structure underlying the molding compound and electrically connected to the first TSV.
11. The device of claim 10 further comprising a metal bump underlying the second interconnect structure and electrically coupled to the first TSV.
12. The device of claim 5 , wherein the substrate comprises a recess extending from the bottom surface of the substrate into the substrate, and wherein at least a portion of the second die is located in the recess.
13. The device of claim 1 , wherein the substrate comprises a semiconductor substrate, and wherein the interposer is substantially free from active devices therein.
14. The device of claim 13 , wherein the substrate comprises a silicon substrate.
15. A device comprising:
an interposer comprising a substrate having a top surface and a bottom surface;
a plurality of through-substrate vias (TSVs) penetrating through the substrate, wherein the plurality of TSVs comprises a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension;
a molding compound underlying the bottom surface of the substrate, wherein the first TSV extends to penetrate the molding compound;
a first interconnect structure formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs;
a first die overlying the first interconnect structure; and
a second die underlying the bottom surface of the substrate and electrically coupled to the second TSV.
16. The device of claim 15 , wherein the second die is formed in the molding compound.
17. The device of claim 15 further comprising a metal bump on a bottom surface of the molding compound and electrically coupled to the first TSV.
18. The device of claim 15 further comprising a second interconnect structure underlying the molding compound and electrically connected to the first TSV.
19. A device comprising:
a interposer comprising a substrate having a top surface and a bottom surface, wherein the substrate comprises a recess extending from the bottom surface of the substrate into the substrate;
a plurality of through-substrate vias (TSVs) penetrating through the substrate, wherein the plurality of TSVs comprises a first TSV having a first length and a first horizontal dimension, and a second TSV having a second length different from the first length, and a second horizontal dimension different from the first horizontal dimension;
a first interconnect structure formed overlying the top surface of the substrate and electrically coupled to the plurality of TSVs;
a first die overlying the first interconnect structure; and
a second die underlying the bottom surface of the substrate and electrically coupled to the second TSV, wherein at least a portion of the second die is located in the recess.
20. The device of claim 19 further comprising a molding compound underlying the bottom surface of the substrate, wherein the first TSV extends to penetrate the molding compound, wherein the second die is disposed in the molding compound.