Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device

1. Synchronous pulse plasma etching equipment, comprising:

a first electrode and at least one second electrode configured to generate plasma in a plasma etching chamber;

a first radio frequency power output unit configured to apply a first radio frequency power having a first frequency and a first duty ratio to the first electrode, and to output a control signal indicative of a phase of the first radio frequency power; and

at least one second radio frequency power output unit configured to apply a second radio frequency power having a second frequency and a second duty ratio to the at least one second electrode; wherein

the at least one second radio frequency power output unit controls the second radio frequency power to be synchronized with the first radio frequency power or to have a phase difference from the first radio frequency power in response to the control signal, and the first frequency, the first duty ratio, the second frequency and the second duty ratio are determined independently.

2. The synchronous pulse plasma etching equipment according to claim 1 , further comprising:

a mode selector configured to output a first selection signal and at least one second selection signal according to a user's selection; wherein

the first radio frequency power output unit is further configured to vary the first frequency and the first duty ratio, and to output the first radio frequency power in response to the first selection signal, and

the at least one second radio frequency power output unit is further configured to vary the second frequency and the second duty ratio in response to the at least one second selection signal and vary a phase difference between the first radio frequency power and the second radio frequency power in response to the at least one second selection signal and the control signal.

3. The synchronous pulse plasma etching equipment according to claim 2 , wherein the first radio frequency power output unit comprises:

a first controller configured to output the control signal and a first pulse signal having the first frequency and the first duty ratio in response to the first selection signal;

a first radio frequency generator configured to output a first radio frequency signal having a third frequency;

a first mixer configured to mix the first radio frequency signal and the first pulse signal, and to output the first radio frequency power; and

a first match network configured to match a load impedance of the first electrode with a characteristic impedance of a cable connecting the first radio frequency power output unit to the first electrode, and to transfer a maximum power of the first radio frequency power to the first electrode.

4. The synchronous pulse plasma etching equipment according to claim 3 , wherein the at least one second radio frequency power output unit comprises:

a second controller configured to output a second pulse signal having the second frequency, the second duty ratio and a first phase difference from the first pulse signal in response to the at least one second selection signal and the control signal;

a second radio frequency generator configured to output a second radio frequency signal having the third frequency;

a second mixer configured to mix the second radio frequency signal and the second pulse signal, and to output the second radio frequency power; and

a second match network configured to match a load impedance of the at least one second electrode with a characteristic impedance of a cable connecting the at least one second radio frequency power output unit to the at least one second electrode, and to transfer a maximum power of the second radio frequency power to the at least one second electrode.

5. The synchronous pulse plasma etching equipment according to claim 4 , wherein the second controller is configured to select a phase difference between the first pulse signal and the second pulse signal from among about 0°, about 90°, about 180°, and about 270° in response to the at least one second selection signal and the control signal.

6. The synchronous pulse plasma etching equipment according to claim 4 , wherein the second controller is configured to select the second frequency from among n times and 1/n times (where n is a natural number) the first frequency in response to the at least one second selection signal.

7. The synchronous pulse plasma etching equipment according to claim 4 , wherein the second controller is configured to select the second duty ratio from among values which are the same as, smaller than, and larger than the first duty ratio in response to the at least one second selection signal.

8. The synchronous pulse plasma etching equipment according to claim 2 , wherein the at least one second radio frequency power output unit is configured to select and output one from among the second radio frequency powers of a basic mode, the second radio frequency powers of a first derivative mode, and the second radio frequency powers of a second derivative mode in response to the at least one second selection signal, wherein

the second radio frequency powers of a basic mode have a second frequency, which is the same as the first frequency, and at least one of a phase difference and a second duty ratio different from the first radio frequency power,

the second radio frequency powers of a first derivative mode have a second frequency which is n times (n is a natural number equal to or greater than 2) the first frequency, and at least one of a phase difference and a second duty ratio different from the first radio frequency power; and

the second radio frequency powers of a second derivative mode have a second frequency, which is 1/n times the first frequency, a second duty ratio equal to the first duty ratio, and a phase difference different from the first radio frequency power.

9. The synchronous pulse plasma etching equipment according to claim 1 , wherein the first radio frequency power output unit comprises:

a controller configured to output the control signal and a first pulse signal having the first frequency and the first duty ratio in response to a selection signal;

a radio frequency generator configured to output a first radio frequency signal having a third frequency;

a mixer configured to mix the first radio frequency signal and the first pulse signal, and to output the first radio frequency power; and

a match network configured to match a load impedance of the first electrode with a characteristic impedance of a cable connecting the first radio frequency power output unit to the first electrode, and to transfer a maximum power of the first radio frequency power to the first electrode.

10. The synchronous pulse plasma etching equipment according to claim 1 , wherein the at least one second radio frequency power output unit comprises:

a controller configured to output a pulse signal having the second frequency, the second duty ratio and a phase difference from the first pulse signal in response to the at least one second selection signal and the control signal;

a radio frequency generator configured to output a radio frequency signal having a third frequency;

a mixer configured to mix the radio frequency signal and the pulse signal, and to output the second radio frequency power; and

a second match network configured to match a load impedance of the at least one second electrode with a characteristic impedance of a cable connecting the at least one second radio frequency power output unit to the at least one second electrode, and to transfer a maximum power of the second radio frequency power to the at least one second electrode.

11. A method of fabricating a semiconductor device, comprising:

applying a first radio frequency power having a first frequency and a first duty ratio to a first electrode in a plasma etching chamber;

outputting a control signal indicative of a phase of the first radio frequency power; and

applying at least one second radio frequency power having a second frequency and a second duty ratio to at least one second electrode in the plasma etching chamber; wherein

the second radio frequency power is synchronized with the first radio frequency power or has a phase difference from the first radio frequency power in response to the control signal, and

the first frequency, the first duty ratio, the second frequency and the second duty ratio are determined independently.

12. The method according to claim 11 , further comprising:

outputting a first selection signal and at least one second selection signal according to a user's selection; wherein applying the first radio frequency power includes:

varying the first frequency and the first duty ratio of the first radio frequency power in response to the first selection signal.

13. The method according to claim 12 , wherein applying the second radio frequency power comprises:

varying the second frequency and the second duty ratio of the second radio frequency power in response to the at least one second selection signal; and

varying the phase difference between the first radio frequency power and the second radio frequency power in response to the at least one second selection signal and the control signal.

14. The method according to claim 11 , wherein applying the first radio frequency power comprises:

outputting the control signal and a first pulse signal having the first frequency and the first duty ratio in response to a first selection signal;

outputting a first radio frequency signal having a third frequency; mixing the first radio frequency signal and the first pulse signal to output the first radio frequency power; and

matching a load impedance of the first electrode with a characteristic impedance of a cable transmitting the first radio frequency power to the first electrode to transfer a maximum power of the first radio frequency power to the first electrode.

15. The method according to claim 11 , wherein applying the at least one second radio frequency power comprises:

outputting a second pulse signal having the second frequency, the second duty ratio and the phase difference from the first pulse signal in response to at least one second selection signal and the control signal;

outputting a second radio frequency signal having the third frequency; mixing the second radio frequency signal and the second pulse signal to output the second radio frequency power; and

matching a load impedance of the at least one second electrode with a characteristic impedance of a cable transmitting the at least one second radio frequency power to the at least one second electrode to transfer a maximum power of the second radio frequency power to the at least one second electrode.

16. The method according to claim 11 , wherein the phase difference between the first pulse signal and the second pulse signal is selected from among about 0°, about 90°, about 180°, and about 270° in response to the at least one second selection signal and the control signal.

17. The method according to claim 11 , wherein the second frequency is selected from among n times and 1/n times (where n is a natural number) the first frequency in response to the at least one second selection signal.

18. The method according to claim 11 , wherein the second duty ratio is selected from among values which are the same as, smaller than, and larger than the first duty ratio in response to the at least one second selection signal.

19. The method according to claim 11 , wherein the second radio frequency powers have a basic mode, the second radio frequency powers of a first derivative mode, and the second radio frequency powers of a second derivative mode, wherein

the second radio frequency powers of a basic mode have a second frequency, which is the same as the first frequency, and at least one of a phase difference and a second duty ratio different from the first radio frequency power,

the second radio frequency powers of a first derivative mode have a second frequency which is n times (n is a natural number equal to or greater than 2) the first frequency, and at least one of a phase difference and a second duty ratio different from the first radio frequency power; and

the second radio frequency powers of a second derivative mode have a second frequency, which is 1/n times the first frequency, a second duty ratio equal to the first duty ratio, and a phase difference different from the first radio frequency power.