Semiconductor light emitting device and method for manufacturing the same
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.
1. A semiconductor light emitting device comprising:
a first semiconductor layer including an n-type semiconductor layer;
a second semiconductor layer including a p-type semiconductor layer; and
a light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,
the first semiconductor layer having:
a first major surface on an opposite side to the light emitting part,
a first irregularity provided on the first major surface and having a bottom face and a top face, and
a second irregularity provided on the bottom face and the top face and having a bottom portion and a top portion,
the first irregularity having a first level difference between the bottom face and the top face along a first direction from the first semiconductor layer toward the second semiconductor layer; and
the second irregularity having a second level difference between the bottom portion and the top portion along the first direction, the second level difference being smaller than the first level difference.
2. The device according to claim 1 , wherein
at least one of the first level difference, a width of the bottom face along a direction perpendicular to the first direction, and a width of the top face along the direction perpendicular to the first direction is larger than a peak wavelength of light emitted from the light emitting part.
3. The device according to claim 1 , wherein
at least one of the second level difference, a width of the bottom portion along a direction perpendicular to the first direction, and a width of the top portion along the direction perpendicular to the first direction is not more than a peak wavelength of light emitted from the light emitting part.
4. The device according to claim 1 , wherein
the first irregurality further has a wall face provided between the bottom face and the top face, and
the wall face is inclined with respect to the first direction.
5. The device according to claim 1 , wherein
the first level difference is 1 micrometer or more and 5 micrometers or less.
6. The device according to claim 5 , wherein
a width of the bottom face along a direction perpendicular to the first direction and a width of the top face along the direction perpendicular to the first direction are 1 micrometer or more and 5 micrometers or less.
7. The device according to claim 1 , wherein
the second level difference is 10 nanometers or more and 500 nanometers or less.
8. The device according to claim 7 , wherein
a width of the bottom portion along a direction perpendicular to the first direction and a width of the top portion along the direction perpendicular to the first direction are 10 nanometers or more and 500 nanometers or less.
9. The device according to claim 1 , wherein
the second level difference is one-tenth or less than the first level difference.
10. The device according to claim 1 , wherein
a width of the bottom portion along a direction perpendicular to the first direction and a width of the top portion along the direction perpendicular to the first direction are one-tenth or less than a width of the bottom face along the direction perpendicular to the first direction and a width of the top face along the direction perpendicular to the first direction.
11. A semiconductor light emitting device comprising:
a first semiconductor layer including an n-type semiconductor layer;
a second semiconductor layer including a p-type semiconductor layer; and
a light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,
the first semiconductor layer having a first major surface on an opposite side to the light emitting part, and an irregularity provided on the first major surface,
the irregularity having a step-like side face including a plurality of terrace faces perpendicular to a first direction from the first semiconductor layer toward the second semiconductor layer, and
the irregularity having a plurality of top portions and a bottom portion provided between the top portions when the first major surface is cut in a plane parallel to the first direction,
widths of the top portions along a second direction connecting the two top portions nearest to each other of the top portions and a width of the bottom portion along the second direction being four times or less widths of the terrace faces along the second direction.
12. The device according to claim 11 , wherein
at least one of a step height of each of the terrace faces along the first direction and a width of each of the terrace faces along the second direction is not more than a peak wavelength of light emitted from the light emitting part.
13. The device according to claim 11 , wherein
a level difference between the top portion and the bottom portion along the first direction is larger than a peak wavelength of light emitted from the light emitting part.
14. A semiconductor light emitting device comprising:
a first semiconductor layer including an n-type semiconductor layer;
a second semiconductor layer including a p-type semiconductor layer; and
a light emitting part provided between the first semiconductor layer and the second semiconductor layer, and including a plurality of barrier layers and a well layer provided between the barrier layers,
the first semiconductor layer having a first major surface on an opposite side to the light emitting part, and an irregularity provided on the first major surface,
the irregularity having a step-like side face including a plurality of terrace faces perpendicular to a first direction from the first semiconductor layer toward the second semiconductor layer, and
the irregularity having a plurality of bottom portions and a top portion provided between the bottom portions when the first major surface is cut in a plane parallel to the first direction,
widths of the bottom portions along a second direction connecting the two bottom portions nearest to each other of the bottom portions and a width of the top portion along the second direction being four times or less than widths of the terrace faces along the second direction.
15. The device according to claim 14 , wherein
at least one of a step height of each of the terrace faces along the first direction and a width of each of the terrace faces along the second direction is not more than a peak wavelength of light emitted from the light emitting part.
16. The device according to claim 14 , wherein
a level difference between the top portion and the bottom portion along the first direction is larger than a peak wavelength of light emitted from the light emitting part.