Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
A hetero-structure field effect transistor (HFET). The HFET may include a first contact and a second contact and a hetero-junction structure. The hetero-junction structure may include a first layer made from a first semiconductor material and a second layer made from a second semiconductor material. An interface at which the first layer and the second layer are in contact with each other may be provided, along which a two dimensional electron gas (2DEG) is formed in a part of the first layer directly adjacent to the interface, for propagating of electrical signals from the first contact to the second contact or vice versa. The transistor may further include a gate structure for controlling a conductance of the channel; a substrate layer made from a substrate semiconductor material, and a dielectric layer separating the first layer from the substrate layer. The second contact may include an electrical connection between the substrate layer and the first layer. The electrical connection may include a passage through the dielectric layer filled with an electrically conducting material which is electrically connected to the first layer.
1. A hetero-structure field effect transistor, comprising:
a first contact and a second contact;
a hetero-junction structure, said hetero-junction structure including:
a first layer made from a first semiconductor material;
a second layer made from a second semiconductor material; and
an interface at which said first layer and said second layer are in contact with each other; a two dimensional electron gas is formed in a part of said first layer directly adjacent to said interface, for propagating of electrical signals from the first contact to the second contact or vice versa;
said transistor further including:
a gate structure for controlling a conductance of a path through the hetero-junction structure, between the first contact and the second contact;
a substrate layer including a silicon carbide layer and a silicon layer, said silicon layer being bonded to said silicon carbide layer by an electrically isolated bonding layer, and wherein said first layer is provided on said silicon layer; and
a dielectric layer separating said first layer from said substrate layer;
said second contact includes an electrical connection between said substrate layer and said first layer, said electrical connection including a passage through at least said dielectric layer, said passage being filled with an epitaxial doped semiconductor material which is electrically connected to the first layer, said epitaxial doped semiconductor material having a higher conductivity than said first semiconductor material.
2. A transistor as claimed in claim 1 , wherein said passage is directly in contact with said two dimensional electron gas.
3. A transistor as claimed in claim 1 , wherein said first semiconductor material is not intentionally doped.
4. A transistor as claimed in claim 1 , wherein said gate structure is provided at a side of said second layer opposite to an interface side at which the second layer is in contact with the first layer, and wherein:
said gate structure includes at least one of the group consisting of:
a part which is positioned, in a longitudinal direction parallel to said interface side surface, directly adjacent to an edge of said dielectric layer which defines said passage;
a part which extends in said longitudinal direction over said passage.
5. A transistor as claimed in claim 1 , wherein said passage is filled with a laterally grown material or a vertically grown material.
6. A transistor as claimed in claim 1 , wherein said second semiconductor material has a band-gap different from a band-gap of the first semiconductor material.
7. A transistor as claimed in claim 1 , wherein said second semiconductor material has a lattice constant different from a lattice constant of the first semiconductor material, and wherein said first semiconductor material exhibits a piezoelectric polarization in a transversal direction from said interface towards said substrate layer.
8. A transistor as claimed in claim 1 , wherein said first semiconductor and/or said second semiconductor material includes one or more materials of the group consisting of: III-nitride material, binary III-nitride material, ternary III-nitride material, quaternary III-nitride material, GaN, AlGaN, InGaN, and epitaxial grown material.
9. A transistor as claimed in claim 1 , wherein said dielectric layer is made of a material including one or more materials of the group consisting of: SiO2, AlN, GaN, and epitaxial grown material.
10. A transistor as claimed in claim 1 , wherein said first layer has a thickness of 3 micrometers or less, such as 2 micrometers or less.
11. A transistor as claimed in claim 1 , wherein said dielectric layer and said first layer are made from the same semiconductor material, and optionally have a different doping.
12. A transistor as claimed in claim 1 , wherein the dielectric layer is made of a semiconductor material which in the passage is provided with a dopant.
13. A transistor as claimed in claim 1 , wherein said electrical connection electrically connects said silicon layer or said silicon carbide layer to said first layer.
14. A transistor as claimed in claim 1 , wherein said electrical connection extends through said substrate layer to a backside of said substrate layer.
15. An integrated circuit including at least one transistor as claimed in claim 1 .
16. A transistor as claimed in claim 2 , wherein said second semiconductor material has a lattice constant different from a lattice constant of the first semiconductor material, and wherein said first semiconductor material exhibits a piezoelectric polarization in a transversal direction from said interface towards said substrate layer.
17. A method for manufacturing a hetero-structure field effect transistor, comprising:
providing a first contact and a second contact;
providing a hetero junction structure, said hetero junction structure, including:
providing a first layer made from a first semiconductor material
providing a second layer made from a second semiconductor material; and
providing an interface at which said first layer and said second layer are in contact with each other, forming along said interface a two dimensional electron gas in a part of the first layer is formed, for propagating of electrical signals from the first contact to the second contact or vice versa;
said method further including:
providing a gate structure for controlling a conductance of a path though said heterojunction structure, between said first contact and said second contact;
providing a substrate layer, wherein said substrate layer includes a silicon carbide layer and a silicon layer, said silicon layer being bonded to said silicon carbide layer by an electrically isolated bonding layer, and wherein said first layer is provided on said silicon layer;
providing a dielectric layer separating said first layer from said substrate layer;
providing an electrical connection between said substrate layer and said first layer, said electrical connection including a passage through said dielectric layer filled with an epitaxial doped semiconductor material which is electrically connected to the first layer, said epitaxial doped semiconductor material having a higher conductivity than said first semiconductor material.
18. A hetero-structure field effect transistor, comprising:
a first contact and a second contact;
a hetero-junction structure, said hetero-junction structure including:
a first layer made from a first semiconductor material;
a second layer made from a second semiconductor material; and
an interface at which said first layer and said second layer are in contact with each other; a two dimensional electron gas is formed in a part of said first layer directly adjacent to said interface, for propagating of electrical signals from the first contact to the second contact or vice versa;
said transistor further including:
a gate structure for controlling a conductance of a path through the hetero-junction structure, between the first contact and the second contact;
a substrate layer, wherein said substrate layer is a laminate layer including an electrically conducting base layer, an electrically conducting top layer positioned between said base layer and said first layer, and an electrically isolating intermediate layer positioned between said base layer and said top layer; and
a dielectric layer separating said first layer from said substrate layer;
said second contact includes an electrical connection between said substrate layer and said first layer, said electrical connection including a passage through at least said dielectric layer, said passage being filled with an epitaxial doped semiconductor material which is electrically connected to the first layer, said epitaxial doped semiconductor material having a higher conductivity than said first semiconductor material.
19. A transistor as claimed in claim 18 , wherein said dielectric layer is made of a material including one or more materials of the group consisting of: SiO2, AlN, GaN, and epitaxial grown material.
20. A transistor as claimed in claim 18 , wherein said second semiconductor material has a lattice constant different from a lattice constant of the first semiconductor material, and wherein said first semiconductor material exhibits a piezoelectric polarization in a transversal direction from said interface towards said substrate layer.