Lead frame land grid array with routing connector trace under unit
A package includes a first plated area, a second plated area, a die attached to the first plated area, and a bond coupling the die to the second plated area. The package further includes a molding encapsulating the die, the bond, and the top surfaces of the first and second plated areas, such that the bottom surfaces of the first and second plated areas are exposed exterior to the package. Additional embodiments include a method of making the package.
1. A semiconductor package comprising:
a. a plurality of contact traces, wherein the contact traces comprise a plurality of plated layers, each contact trace comprising a first end and a second end;
b. a first semiconductor die, wherein at least a portion of the contact traces are arranged underneath the semiconductor die;
c. a resin encapsulant for encapsulating at least a portion of the plurality of contact traces and the first semiconductor die; and
d. a die attach pad for receiving the first semiconductor die, wherein the die attach pad comprises a plurality of plated layers.
2. The semiconductor package of claim 1 wherein the second ends of the contract traces each comprise a contact pad for receiving a solder ball.
3. The semiconductor package of claim 1 wherein at least one second end comprises at least one support structure.
4. The semiconductor package of claim 3 wherein at least one support structure extends in an outward direction from the second end of the contact trace.
5. The semiconductor package of claim 3 wherein at least one support structure substantially circumscribes the second end of the contact trace.
6. The semiconductor package of claim 3 wherein at least one support structure comprises an arcuate shape.
7. The semiconductor package of claim 3 wherein at least one support structure comprises a linear shape.
8. The semiconductor package of claim 1 further comprising a passivation layer for resisting solder, the passivation layer having openings for allowing solder to bond.
9. The semiconductor package of claim 8 wherein the openings are located at the second ends.
10. The semiconductor package of claim 1 wherein the contract traces comprise support structures.
11. The semiconductor package of claim 10 wherein the support structures extend outward from the contact traces.
12. The semiconductor package of claim 1 wherein the plated layers comprise any among palladium, nickel and gold.
13. The semiconductor package of claim 1 further wherein the second ends of the contact traces comprise solder balls for electrically coupling the semiconductor package to an application circuit board.
14. The semiconductor package of claim 1 wherein the semiconductor die is coupled to the first end of at least one contact trace by a bondwire.
15. The semiconductor package of claim 1 wherein the semiconductor die is coupled to the first end of at least one contact trace by a solder ball.
16. The semiconductor package of claim 1 further comprising a second semiconductor die coupled to the first semiconductor die, wherein the second semiconductor die is coupled to the first end of at least one contact trace by a bondwire.
17. The semiconductor package of claim 1 further comprising a second semiconductor die coupled to the first semiconductor die, wherein the second semiconductor die is coupled to the die first end of at least one contact trace by a solder bump.
18. The semiconductor package of claim 1 further comprising a second semiconductor die wherein the second semiconductor die is coupled to the first semiconductor die by a bondwire.
19. The semiconductor package of claim 1 further comprising a second semiconductor die wherein the second semiconductor die is coupled to the first semiconductor die by a solder bump.
20. The semiconductor package of claim 1 wherein the plurality of plated layers comprise at least two different metal layers.
21. A semiconductor device comprising:
a. a semiconductor die having an active surface and an inert surface;
b. a plurality of contact traces routed underneath the inert surface, wherein the contact traces comprise a plurality of plated layers, each contact trace having a first end and a second end;
c. at least one bondwire for electrically coupling the first end of at least one contact trace to the active surface of the semiconductor die;
d. a resin encapsulant encasing at least a portion of the semiconductor die and plurality of contact traces; and
e. a plurality of support structures formed about the second ends of the plurality of contact traces, wherein each among the plurality of support structures substantially circumscribe the second ends of the contact traces.
22. A semiconductor package comprising:
a. a plurality of contact traces, wherein the contact traces comprise a plurality of plated layers, wherein each contact trace comprising a first end and a second end, wherein the second end includes a support structure substantially circumscribing the second end;
b. a first semiconductor die, wherein at least a portion of the contact traces are arranged underneath the semiconductor die; and
c. a resin encapsulant for encapsulating at least a portion of the plurality of contact traces and the first semiconductor die.
23. A semiconductor package comprising:
a. a plurality of contact traces, wherein the contact traces comprise a plurality of plated layers, wherein each contact trace comprising a first end and a second end, wherein the second end includes a support structure having an arcuate shape;
b. a first semiconductor die, wherein at least a portion of the contact traces are arranged underneath the semiconductor die; and
c. a resin encapsulant for encapsulating at least a portion of the plurality of contact traces and the first semiconductor die.
24. A semiconductor package comprising:
a. a plurality of contact traces, wherein the contact traces comprise a plurality of plated layers, wherein each contact trace comprising a first end and a second end, wherein the contract traces comprise support structures extending outwardly from the contact traces;
b. a first semiconductor die, wherein at least a portion of the contact traces are arranged underneath the semiconductor die; and
c. a resin encapsulant for encapsulating at least a portion of the plurality of contact traces and the first semiconductor die.