Method of fabricating a TSV for 3D packaging of semiconductor device
The present invention relates to a through silicon via (TSV) for 3D packaging to integrate a semiconductor device and a method for manufacturing the same, and more particularly, to a through silicon via (TSV) for 3D packaging of a semiconductor device that is capable of improving production efficiency, having very high electric conductivity, and minimizing electrical signal delay, without using a carrier wafer by self-aligning substrates in a low temperature state and sequentially bonding a plurality of semiconductor dies (or semiconductor chips), and a method of manufacturing the same.
1. A method for manufacturing a through silicon via (TSV), comprising:
preparing a substrate having a metal thin film formed in a predetermined region of the substrate;
preparing a semiconductor die (or semiconductor chip) having an insulation layer formed on a side of the semiconductor die (or semiconductor chip) formed with a via hole and formed with a through via hole by back grinding the other side of the semiconductor die (or semiconductor chip);
aligning the substrate formed with the metal thin film and the semiconductor die (or semiconductor chip) formed with the insulation layer;
forming a seed layer on one side including the via hole of the aligned semiconductor die (or semiconductor chip) wherein the seed layer is in direct contact with the metal thin film; and
forming an electroplating layer on a top portion of the seed layer by using electroplating, including the inside of the via hole,
wherein the preparing of the semiconductor die (or semiconductor chip) includes first surface treatment of a bonding surface of the semiconductor die (or semiconductor chip) formed with the through via hole such that the bonding surface of the semiconductor die (or semiconductor chip) has a hydrophilic surface,
wherein the preparing of the substrate includes second surface treatment of a bonding surface of the substrate, and
wherein the aligning includes spraying moisture or applying water drop to at least the bonding surface of the semiconductor die (or semiconductor chip) or the bonding surface of the substrate to form a wetting layer between the semiconductor die (or semiconductor chip) and the substrate, and then contacting the semiconductor die (or semiconductor chip) to the substrate to be self-aligned.
2. The method of claim 1 , wherein the preparation of the substrate further comprises forming an oxide bonding layer having the metal thin film provided therein, and
removing a predetermined region of the oxide bonding layer on the top portion of the metal thin film is performed.
3. The method of claim 2 , wherein the oxide bonding layer 120 is formed by using a chemical vapor deposition tetraethylorthosilicate (CVD TEOS) process or a spin on glass (SOG) process, and
the removing of the oxide bonding layer is performed by etching or chemical-mechanical polishing (CMP).
4. The method of claim 1 , wherein the first surface treatment and the second surface treatment are plasma treatments.
5. The method of claim 1 , wherein the plurality of semiconductor dies (or semiconductor chips) are stacked by repeatedly performing the removing of the electroplating layer other than at a predetermined area communicating with the via hole and the preparing of the semiconductor die (or semiconductor chip) for the electroplating.
6. The method of claim 1 , wherein the metal thin film is any one selected from Cu, Ag, Au, Pt, and Al.
7. The method of claim 1 , wherein the seed layer is Cu.
8. The method of claim 1 , wherein the electroplating layer is any one selected from Cu, W, and Al.
9. A through silicon via (TSV) manufactured by a manufacturing method claimed in claim 1 .