Semiconductor package cooled by grounded cooler
A semiconductor device includes a package and a cooler. The semiconductor package includes a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member. The metal member has a metal portion thermally connected to the semiconductor element, an insulating layer on the metal portion, and a conducting layer on the insulating layer. The conducting layer is at least partially exposed outside the molding member and serves as a radiation surface for radiating heat of the semiconductor element. The cooler has a coolant passage through which a coolant circulates to cool the conducting layer. The conducting layer and the cooler are electrically connected together.
1. A semiconductor device comprising:
a semiconductor package including a semiconductor element, a metal member, and a molding member for encapsulating the semiconductor element and the metal member therein, the metal member having a metal portion thermally connected to the semiconductor element, an electrically insulating layer on the metal portion, and an electrically conducting layer on the insulating layer, the conducting layer being at least partially exposed outside the molding member and serving as a radiation surface for radiating heat of the semiconductor element;
a cooler having a coolant passage through which a coolant circulates, the conducting layer and the cooler being electrically connected together, and the cooler being configured to cool the conducting layer and absorb the heat from the radiating surface of the semiconductor element by circulating the coolant within the cooler;
a viscous member having a viscosity and both heat conducting and electrical insulating properties filling a clearance between the radiation surface of the semiconductor package and the cooler, and the viscous member contacting both the radiation surface and the cooler and conducting heat exchange between the radiation surface and the cooler; and
a terminal member having a first end located inside the molding member and electrically connected to the conducting layer and a second end located outside the molding member and electrically connected to the cooler, the conducting layer and the cooler being electrically connected together through the terminal member.
2. The semiconductor device according to claim 1 , wherein the terminal member extends from a surface of the conducting layer that is different from the radiation surface.
3. The semiconductor device according to claim 2 , wherein
the conducting layer has a front surface serving as the radiation surface, a back surface opposite to the front surface, and a side surface between the front and back surfaces, and
the terminal member extends from the side surface of the conducting layer.
4. The semiconductor device according to claim 1 , wherein
the conducting layer has a front surface serving as the radiation surface, a back surface opposite to the front surface, and a side surface between the front and back surfaces, and
the terminal member extends from the side surface of the conducting layer.