Multi-ion beam implantation apparatus and method

1. An apparatus comprising:

a first charged particle beam source;

a second charged particle beam source;

an charged particle beam analyzer configured to analyze a first charged particle beam received from the first charged particle beam source and a second charged particle beam received from the second charged particle beam source, such that the charged particle beam analyzer emits a first analyzed charged particle beam and a second analyzed charged particle beam; and

a multi-charged particle beam angle incidence control system disposed between the charged particle beam analyzer and a wafer, the multi-charged particle beam angle incidence control system configured to direct the first analyzed charged particle beam and the second analyzed charged particle beam to the wafer at different angles of incidence.

2. The apparatus of claim 1 wherein the first charged particle beam is an ion beam, and the second charged particle beam is an ion beam.

3. The apparatus of claim 1 wherein the multi-charged particle beam angle incidence control system includes an electric field feature for directing the first analyzed charged particle beam and the second analyzed charged particle beam to the wafer.

4. The apparatus of claim 3 wherein the electric field feature includes:

a first set of electric plates that directs the first analyzed charged particle beam along a first travel path; and

a second set of electric plates that directs the second analyzed charged particle beam along a second travel path that is different than the first travel path.

5. The apparatus of claim 1 wherein the multi-charged particle beam angle incidence control system includes a magnetic field feature for directing the first analyzed charged particle beam and the second analyzed charged particle beam to the wafer.

6. The apparatus of claim 1 wherein the multi-charged particle beam angle incidence control system includes an electric field feature and a magnetic field feature for directing the first analyzed charged particle beam and the second analyzed charged particle beam to the wafer.

7. The apparatus of claim 1 wherein the multi-charged particle beam angle incidence control system is configured to direct the first charged particle beam to strike the wafer at a first angle of incidence and direct the second charged particle beam to strike the wafer at a second angle of incidence.

8. The apparatus of claim 7 wherein the first angle of incidence is substantially equal to but opposite the second angle of incidence such that the first angle of incidence is in a positive direction relative to a normal to the wafer and the second angle of incidence is in a negative direction relative to the normal to the wafer.

9. The apparatus of claim 1 further including a one-dimensional (1D) scanning mechanism, such that the first analyzed charged particle beam and the second analyzed charged particle beam are directed to the wafer in a 1D scanning mode.

10. The apparatus of claim 1 further including a two-dimensional (2D) scanning mechanism, such that the first analyzed charged particle beam and the second analyzed charged particle beam are directed to the wafer in a 2D scanning mode.

11. An apparatus comprising:

an ion beam source that emits at least two ion beams;

an ion beam analyzer; and

a multi-ion beam angle incidence control system, wherein the ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer, wherein the multi-ion beam angle incidence control system is configured to direct each of the emitted at least two ion beams to strike the wafer at different angles of incidence.

12. The apparatus of claim 11 wherein:

the at least two ion beams include a first ion beam and a second ion beam; and

the multi-ion beam angle incidence control system is configured to direct the first ion beam to strike the wafer at a first angle of incidence and direct the second ion beam to strike the wafer at a second angle of incidence.

13. The apparatus of claim 12 wherein the first angle of incidence is substantially equal to but opposite the second angle of incidence such that the first angle of incidence is in a positive direction relative to a normal to the wafer and the second angle of incidence is in a negative direction relative to the normal to the wafer.

14. The apparatus of 11 wherein the ion beam source includes a first ion beam source that emits a first ion beam and a second ion beam source that emits a second ion beam.

15. The apparatus of claim 11 further including a one-dimensional (1D) scanning mechanism, such that the at least two ion beams are directed to the wafer in a 1D scanning mode.

16. The apparatus of claim 11 further including a two-dimensional (2D) scanning mechanism, such that the at least two ion beams are directed to the wafer in a 2D scanning mode.

17. A method comprising:

generating a first ion beam;

generating a second ion beam; and

directing the first ion beam and the second ion beam to a wafer, such that the first ion beam and the second ion beam simultaneously strike the wafer, the first ion beam striking the wafer at a first angle of incidence and the second ion beam striking the wafer at a second angle of incidence, wherein the directing the first ion beam and the second ion beam to the wafer includes implanting opposite sides of a fin structure to form a doped feature in a source/drain region of the fin structure.

18. The method claim 17 wherein:

the first angle of incidence is substantially equal to the second angle of incidence; and

the first angle of incidence is in a positive direction relative to a normal to the wafer and the second angle of incidence is in a negative direction relative to the normal to the wafer.

19. The method of claim 17 , wherein the an ion beam source generated the First and second ion beams, and

wherein a multi-ion beam angle incidence control system directs the first ion beam and the second ion beam to the wafer.

20. The method of claim 17 , wherein first angle of incidence is different than the second angle of incidence.