Semiconductor device, semiconductor package, interposer, semiconductor device manufacturing method and interposer manufacturing method
A semiconductor device includes an interposer having a base member including a first surface and a second surface opposite to the first surface, a first interconnect formed on the first surface of the base member, a first insulating film formed on the first surface of the base member, a first external terminal and a second external terminal neighboring the first external terminal formed on the second surface of the base member, a second interconnect formed on the second surface of the base member and passing between the first external terminal and the second external terminal, and a second insulating film formed on the second surface of the base member, a semiconductor chip mounted on the first insulating film, a sealing resin formed on the first insulating film and sealing the semiconductor chip. The second insulating film has an opening so that the second interconnect is exposed in an area.
1. A semiconductor device comprising:
an interposer having
a base member including a first surface and a second surface opposite to the first surface,
a first interconnect formed on the first surface of the base member,
a first insulating film formed on the first surface of the base member,
a first external terminal and a second external terminal neighboring the first external terminal formed on the second surface of the base member,
a second interconnect formed on the second surface of the base member and passing between the first external terminal and the second external terminal, and
a second insulating film formed on the second surface of the base member,
a semiconductor chip mounted on the first insulating film,
a sealing resin formed on the first insulating film and sealing the semiconductor chip,
wherein the second insulating film has an opening so that the second interconnect is exposed in an area where the second interconnect intersects with a line connecting centers of the first external terminal and the second external terminal.
2. The semiconductor package according to claim 1 ,
wherein the first external terminal and the second external terminal are formed along an edge of the semiconductor chip.
3. The semiconductor package according to claim 2 ,
wherein the opening is symmetric with respect to the line.
4. The semiconductor device according to claim 2 ,
the interposer further comprising a bonding pad formed on the first surface of the base member, and the semiconductor device further comprising a bonding wire coupling the bonding pad of the interposer to the semiconductor chip.
5. The semiconductor device according to claim 4 ,
wherein the base member comprises a glass cloth and a epoxy resin.
6. The semiconductor device according to claim 5 ,
the interposer further having a through hole and a third external terminal,
wherein the second interconnect has one end connected to the through hole and another end connected to the third external terminal.
7. The semiconductor device according to claim 6 , wherein the through hole overlaps the semiconductor chip, and the third external terminal does not overlap the semiconductor chip, in a plan view.
8. The semiconductor device according to claim 1 , wherein a metal film is formed on the second interconnect exposed from the second insulating film.
9. The semiconductor device according to claim 8 , wherein the metal film comprises Ni.
10. The semiconductor device according to claim 1 , further comprising:
an interconnection substrate,
an underfill resin layer filled between the second insulating film and the interconnection substrate.