Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
1. A pattern forming method, comprising:
forming a resist film by applying a resist composition whose solubility in a negative tone developer containing an organic solvent decreases upon irradiation with an actinic ray or radiation and which contains a resin having: an alicyclic hydrocarbon structure, a dispersity of less than or equal to 1.7 or a weight average molecular weight of less than or equal to 6,000, and being capable of increasing a polarity of the resin by an action of an acid;
exposing the resist film; and
developing the resist film after the exposing with the negative tone developer,
wherein the negative tone developer is a developer consisting essentially of an organic solvent.
2. A pattern forming method comprising:
forming a resist film by applying a resist composition whose solubility in a negative tone developer containing an organic solvent decreases upon irradiation with an actinic ray or radiation and which contains a resin having: an alicyclic hydrocarbon structure, a dispersity of less than or equal to 1.7 or a weight average molecular weight of less than or equal to 6,000, and being capable of increasing a polarity of the resin by an action of an acid;
exposing the resist film; and
developing the resist film after the exposing with the negative tone developer,
wherein the negative tone developer contains an ester-based solvent and is a developer consisting essentially of an organic solvent.
3. The pattern forming method according to claim 1 ,
wherein the negative tone developer contains a ketone-based solvent.
4. A pattern forming method comprising:
forming a resist film by applying a resist composition whose solubility in a negative tone developer containing an organic solvent decreases upon irradiation with an actinic ray or radiation and which contains a resin having: an alicyclic hydrocarbon structure, a dispersity of less than or equal to 1.7 or a weight average molecular weight of less than or equal to 6,000, and being capable of increasing a polarity of the resin by an action of an acid;
exposing the resist film; and
developing the resist film after the exposing with the negative tone developer,
wherein the negative tone developer is a developer consisting essentially of an organic solvent and consists essentially of an ester-based solvent.
5. The pattern forming method according to claim 1 ,
wherein the negative tone developer consists essentially of a ketone-based solvent.
6. The pattern forming method according to claim 1 ,
wherein the negative tone developer is a mixture of two or more kinds of organic solvents.
7. The pattern forming method according to claim 1 , which further comprises:
performing washing using a rinsing solution containing an organic solvent after the developing.
8. The pattern forming method according to claim 7 ,
wherein the organic solvent contained in the rinsing solution is an alcohol-based solvent.
9. The pattern forming method according to claim 1 ,
wherein the resin has no aromatic group.
10. The pattern forming method according to claim 1 ,
wherein the resin contains no fluorine or silicon atom.
11. The pattern forming method according to claim 1 ,
wherein the resin is a resin where all repeating units are composed of a (meth)acrylate-based repeating unit.
12. The pattern forming method according to claim 1 ,
wherein the exposing of the resist film is performed by using an ArF excimer laser.
13. The pattern forming method according to claim 2 , which further comprises:
performing washing using a rinsing solution containing an organic solvent after the developing.
14. The pattern forming method according to claim 2 ,
wherein the organic solvent contained in the rinsing solution is an alcohol-based solvent.
15. The pattern forming method according to claim 2 ,
wherein the resin has no aromatic group.
16. The pattern forming method according to claim 2 ,
wherein the resin contains no fluorine or silicon atom.
17. The pattern forming method according to claim 2 ,
wherein the resin is a resin where all repeating units are composed of a (meth)acrylate-based repeating unit.
18. The pattern forming method according to claim 2 ,
wherein the exposing of the resist film is performed by using an ArF excimer laser.
19. The pattern forming method according to claim 2 ,
wherein the ester-based solvent is butyl acetate.
20. The pattern forming method according to claim 5 ,
wherein the negative tone developer consists of a ketone-based solvent.
21. The pattern forming method according to claim 1 ,
wherein the developer consists essentially of an organic solvent having a boiling point of 175° C. or lower.
22. The pattern forming method according to claim 21 ,
wherein the lower limit of the boiling point is 77° C. or higher.
23. The pattern forming method according to claim 21 ,
wherein the developer consists of an organic solvent having a boiling point of 175° C. or lower.
24. The pattern forming method according to claim 21 ,
wherein the organic solvent having a boiling point of 175° C. or lower is an ester-based solvent.
25. The pattern forming method according to claim 21 ,
wherein the organic solvent having a boiling point of 175° C. or lower is a ketone-based solvent.
26. The pattern forming method according to claim 1 ,
wherein the resist composition contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation.
27. A method for producing a semiconductor, comprising the pattern forming method according to claim 1 .
28. A method for producing a semiconductor, comprising the pattern forming method according to claim 2 .
29. A method for producing a semiconductor, comprising the pattern forming method according to claim 4 .