Method for producing semiconductor wafer
A method of producing a semiconductor wafer, which includes: placing a wafer ( 10 ) provided with a substrate ( 11 ) and a semiconductor layer ( 20 ) formed thereon, on a carrier plate (fixing plate) ( 31 ) of a grinder via fixing wax ( 33 a and 33 b ) such that the surface ( 10 a ) to be ground faces upward; heating the carrier plate to soften the fixing wax; pressure-contacting the wafer from the side of the surface ( 10 a ) to be ground using an air bag such that a portion of the softened fixing wax spreads and protrudes from the peripheral edge of the wafer; cooling the carrier plate while applying pressure to cure the fixing wax and fix the wafer onto the carrier plate; and rotating the surface ( 10 a ) to be ground of the fixed wafer while pressure-contacting the surface ( 10 a ) to the grinding plate of the grinder, thereby grinding the surface ( 10 a ) to be ground.
1. A method for producing a semiconductor wafer, comprising:
a placing step in which a semiconductor wafer including a substrate and a semiconductor layer formed on the substrate is placed, with a surface-to-be-ground of the semiconductor wafer facing upward, on a fixing plate of a grinder via a fixing wax;
a heating step in which the fixing plate on which the semiconductor wafer is placed in the placing step is heated to soften the fixing wax;
a pressure-contact bonding step in which, in a state where the fixing wax is softened in the heating step, the semiconductor wafer is brought into pressure-contact from a side of the surface-to-be-ground by an air bag and bonded onto the fixing plate;
a fixing step in which the fixing plate is cooled while the semiconductor wafer bonded onto the fixing plate in the pressure-contact bonding step is pressurized, and thereby the semiconductor wafer is fixed onto the fixing plate by curing the fixing wax; and
a grinding step in which the surface-to-be-ground of the semiconductor wafer fixed onto the fixing plate is rotated while being in pressure-contact with a grinding plate of the grinder to be ground,
wherein, in the placing step, the semiconductor wafer is placed on the fixing plate via a fixing sheet and the fixing wax, and
wherein the fixing sheet is configured with machine made Japanese paper or a nonwoven fabric.
2. The method for producing a semiconductor wafer according to claim 1 , wherein, in the fixing step, a rubber-like elastic body sheet is placed on the surface-to-be-ground of the semiconductor wafer, and the semiconductor wafer is pressurized via the rubber-like elastic body sheet.
3. The method for producing a semiconductor wafer according to claim 1 , wherein the substrate is selected from sapphire or silicon.
4. The method for producing a semiconductor wafer according to claim 1 , wherein the semiconductor layer of the semiconductor wafer is formed by laminating an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer that include a group III nitride semiconductor.
5. The method for producing a semiconductor wafer according to claim 1 , wherein, in the pressure-contact bonding step, a load is applied to the softened fixing wax on the fixing plate from the center portion toward the peripheral portion of the fixing wax, such that the fixing wax on the fixing plate extends substantially uniformly and a part of the fixing wax spreads so as to extend off the peripheral portion of the semiconductor wafer.
6. The method for producing a semiconductor wafer according to claim 1 , wherein, the machine made Japanese paper is a paper being compliant with Japanese Industrial Standards (JIS) P4500.
7. The method for producing a semiconductor wafer according to claim 1 , wherein the machine made Japanese paper includes fibers made of one or more kinds of plants selected from kouzo, mitsumata and gampi.
8. The method for producing a semiconductor wafer according to claim 1 , wherein the fixing sheet is configured with machine made Japanese paper including fibers made of one or more kinds of plants selected from kouzo, mitsumata and gampi.