Semiconductor device and method for manufacturing the same
View Patent ↗An object of the present invention is to increase adhesiveness between thin films, particularly a high molecular film formed on an insulating surface, and the present invention provides a semiconductor device with high reliability and a method for manufacturing the semiconductor device with high yield. A semiconductor device of the present invention comprises a laminate structure formed in close contact with an organic insulating film on a hydrophobic surface of an inorganic insulating film including silicon and nitrogen. A film having the hydrophobic surface is an insulating film having a contact angle of water of equal to or more than 30°, preferably of equal to or more than 40°.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate insulating film over a semiconductor film;
forming a gate electrode over the gate insulating film;
forming a first inorganic insulating film containing hydrogen over the gate electrode;
reducing a hydrogen content in the first inorganic insulating film by heat-treating the first inorganic insulating film;
after the step of reducing the hydrogen content in the first inorganic insulating film, forming a second inorganic insulating film including silicon and nitrogen on and in contact with the first inorganic insulating film; and
forming an organic insulating film on and in contact with the second inorganic insulating film,
wherein a hydrogen concentration in the second inorganic insulating film is higher than a hydrogen concentration in the first inorganic insulating film.
2. A method for manufacturing a semiconductor device according to claim 1 , wherein the first inorganic insulating film and the second inorganic insulating film are a nitride.
3. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the second inorganic insulating film has a larger contact angle of water than the first inorganic insulating film.
4. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the organic insulating film is formed of a photosensitive organic insulating film.
5. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the second inorganic insulating film is formed to have a contact angle of water of equal to or more than 30° .
6. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate insulating film over a semiconductor film;
forming a gate electrode over the gate insulating film;
forming a first inorganic insulating film over the gate electrode;
heat-treating the first inorganic insulating film;
after the step of heat-treating the first inorganic insulating film, forming a second inorganic insulating film including silicon and nitrogen on and in contact with the first inorganic insulating film; and
forming an organic insulating film on and in contact with the second inorganic insulating film,
wherein a hydrogen concentration in the second inorganic insulating film is higher than a hydrogen concentration in the first inorganic insulating film,
wherein the first inorganic insulating film and the second inorganic insulating film are a nitride.
7. A method for manufacturing a semiconductor device according to claim 6 ,
wherein the second inorganic insulating film has a larger contact angle of water than the first inorganic insulating film.
8. A method for manufacturing a semiconductor device according to claim 6 ,
wherein the second inorganic insulating film is formed to have a contact angle of water of equal to or more than 40° .
9. A method for manufacturing a semiconductor device according to claim 6 ,
wherein the organic insulating film is formed to include one of or a plurality of organic resin materials selected from acrylic resin, polyamide, or polyimide of photosensitive or nonphotosensitive.
10. A method for manufacturing a semiconductor device according to claim 6 , further comprising:
forming a source electrode and a drain electrode which are connected to the semiconductor film after the formation of the organic insulating film; and
forming an electrode which is connected to one of the source electrode and the drain electrode and functions as a pixel electrode.
11. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the first inorganic insulating film comprises silicon oxide.
12. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the first inorganic insulating film comprises silicon, oxygen and nitrogen where a content of oxygen is larger than a content of nitrogen.
13. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the second inorganic insulating film comprises silicon nitride.
14. A method for manufacturing a semiconductor device according to claim 1 ,
wherein the second inorganic insulating film comprises silicon, oxygen and nitrogen where a content of nitrogen is larger than a content of oxygen.
15. A method for manufacturing a semiconductor device according to claim 1 , wherein the heat-treatment of the first inorganic insulating film is performed at 300 ° C. to 550 ° C.
16. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first inorganic insulating film containing hydrogen over a semiconductor layer;
reducing a hydrogen content in the first inorganic insulating film by heat-treating the first inorganic insulating film;
after the step of reducing the hydrogen content in the first inorganic insulating film, forming a second inorganic insulating film including silicon and nitrogen on and in contact with the first inorganic insulating film; and
forming an organic insulating film on and in contact with the second inorganic insulating film,
wherein a hydrogen concentration in the second inorganic insulating film is higher than a hydrogen concentration in the first inorganic insulating film.
17. A method for manufacturing a semiconductor device according to claim 16 , wherein the heat-treatment of the first inorganic insulating film is performed at 300° C. to 550° C.
18. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the second inorganic insulating film has a larger contact angle of water than the first inorganic insulating film.
19. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the organic insulating film is formed of a photosensitive organic insulating film.
20. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the second inorganic insulating film is formed to have a contact angle of water of equal to or more than 30° .
21. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the first inorganic insulating film comprises silicon, oxygen and nitrogen where a content of oxygen is larger than a content of nitrogen.
22. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the second inorganic insulating film comprises silicon nitride.
23. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the second inorganic insulating film comprises silicon, oxygen and nitrogen where a content of nitrogen is larger than a content of oxygen.
24. A method for manufacturing a semiconductor device according to claim 16 ,
wherein the semiconductor layer comprises silicon.