Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating layer which contains a halogen element
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H 2 O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
introducing the substrate into a first treatment chamber;
introducing a sputtering gas into the first treatment chamber;
forming an oxide semiconductor layer over the gate insulating layer;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
introducing the substrate into a second treatment chamber;
introducing a sputtering gas containing oxygen and a halogen element into the second treatment chamber;
forming an insulating layer over the oxide semiconductor layer, the insulating layer containing the halogen element; and
heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the insulating layer.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein remaining moisture is evacuated from the first treatment chamber and the second treatment chamber with use of a cryopump.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein fluorine or chlorine is used as the halogen element.
4. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
introducing the substrate into a first treatment chamber;
introducing a sputtering gas into the first treatment chamber;
forming an oxide semiconductor layer over the gate insulating layer;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing a halogen element;
introducing the substrate into a second treatment chamber;
introducing a sputtering gas containing oxygen into the second treatment chamber;
forming an insulating layer over the oxide semiconductor layer; and
heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the insulating layer.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein remaining moisture is evacuated from the first treatment chamber and the second treatment chamber with use of a cryopump.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein fluorine or chlorine is used as the halogen element.
7. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
introducing the substrate into a first treatment chamber, wherein a halogen element is contained in the first treatment chamber with use of a gas containing the halogen element;
forming a gate insulating layer over the gate electrode layer, the gate insulating layer containing the halogen element;
introducing the substrate into a second treatment chamber;
introducing a sputtering gas into the second treatment chamber;
forming an oxide semiconductor layer over the gate insulating layer;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
introducing the substrate into a third treatment chamber;
introducing a sputtering gas containing oxygen into the third treatment chamber;
forming an insulating layer over the oxide semiconductor layer; and
heating the substrate to diffuse hydrogen or moisture included in the oxide semiconductor layer into the gate insulating layer.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein remaining moisture is evacuated from the first treatment chamber, the second treatment chamber, and the third treatment chamber with use of a cryopump.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein fluorine or chlorine is used as the halogen element.