Method of making a semiconductor device having a multicomponent oxide
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
1. A method of forming a channel, comprising:
providing at least one precursor composition that includes a plurality of precursor compounds, wherein the precursor compounds comprise indium, gallium, and zinc oxides; and
depositing the channel including the precursor composition to form a multicomponent from the precursor composition to electrically couple a drain electrode and a source electrode.
2. The method of claim 1 , including depositing the precursor composition in a liquid form.
3. The method of claim 2 , wherein depositing the channel includes utilizing an ink-jet deposition technique when the precursor composition is in the liquid form.
4. The method of claim 1 , wherein providing the precursor composition includes providing one or more precursor compounds that include A x , a one or more precursor compounds that include B x , and one or more precursor compounds that include C x , wherein A is In, B is Ga, C is Zn, and wherein each x is independently a non-zero integer.
5. The method of claim 1 , wherein providing the plurality of precursor compounds includes providing one or more compounds that include D x , wherein D is Cd, and wherein each x is independently a non-zero integer.
6. The method of claim 1 , wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
7. The method of claim 1 , wherein depositing a channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.
8. The method of claim 1 , including providing a substrate or substrate assembly; and
forming a semiconductor device on the substrate or substrate assembly.
9. A method of forming a channel, comprising:
providing at least one precursor composition that includes indium, gallium, and zinc oxides; and
depositing the channel including the precursor composition to form an indium-gallium-zinc metal oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
10. The method of claim 9 , including positioning a gate dielectric between the channel and a gate electrode.
11. The method of claim 9 , wherein depositing the channel includes depositing the channel utilizing an ink-jet deposition technique.
12. The method of claim 9 , including forming the source, drain, and gate electrodes from a substantially transparent material.
13. The method of claim 9 , including providing a substrate or substrate assembly; and
forming a semiconductor device including the channel on the substrate or substrate assembly.
14. A method of forming a channel, comprising:
forming a drain electrode;
forming a source electrode; and
forming a channel, configured to electrically couple the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula A x B x C x O x , from a precursor composition that includes one or more precursor compounds that include A x , one or more precursor compounds that include B x , and one or more precursor compounds that include C x wherein A is In, B is Ga, C is Zn, O is atomic oxygen, and wherein each x is independently a non-zero integer.
15. The method of claim 14 , including forming a gate electrode; and
forming a gate dielectric, configured to separate the channel and the gate electrode.
16. The method of claim 15 , including forming the source, drain, and gate electrodes from a substantially transparent material.
17. The method of claim 14 , including depositing the precursor composition in a liquid form.
18. The method of claim 14 , wherein having the one or more compounds of the formula A x B x C x O x includes having an atomic composition ratio of A:B:C, wherein A, B, and C are each in a range of about 0.017 to about 0.95.
19. The method of claim 14 , wherein forming the channel includes forming one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.
20. The method of claim 14 , including forming a substrate or substrate assembly; and
forming a semiconductor on the substrate or substrate assembly.