Semiconductor device and method of manufacturing same
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
1. A semiconductor device comprising:
a semiconductor layer over a substrate;
a gate insulating film over the semiconductor layer;
a gate electrode over the gate insulating film; and
a source electrode and a drain electrode electrically connected to the semiconductor layer,
wherein the gate electrode includes a first conductive film and a second conductive film over and in contact with the first conductive film,
wherein one end of the first conductive film extends longer than the other end of the first conductive film beyond the second conductive film, and
wherein each of the first conductive film and the second conductive film has an inclined side surface.
2. The semiconductor device according to claim 1 , wherein the gate insulating film is not in contact with the source electrode and the drain electrode.
3. The semiconductor device according to claim 1 , wherein the gate insulating film does not extend beyond the one end of the first conductive film.
4. The semiconductor device according to claim 1 , wherein the semiconductor device is incorporated into one selected from the group consisting of a computer, a camera, a goggle type display, a projector, a telephone, and an electronic book.
5. A semiconductor device comprising:
a semiconductor layer over a substrate;
a gate insulating film over the semiconductor layer;
a gate electrode over the gate insulating film; and
a source electrode and a drain electrode electrically connected to the semiconductor layer,
wherein the gate electrode includes a first conductive film and a second conductive film over and in contact with the first conductive film,
wherein one end of the first conductive film extends beyond one end of the second conductive film, and the other end of the first conductive film is in contact with the other end of the second conductive film, and
wherein each of the first conductive film and the second conductive film has an inclined side surface.
6. The semiconductor device according to claim 5 , wherein the gate insulating film is not in contact with the source electrode and the drain electrode.
7. The semiconductor device according to claim 5 , wherein the gate insulating film does not extend beyond the one end of the first conductive film.
8. The semiconductor device according to claim 5 , wherein the semiconductor device is incorporated into one selected from the group consisting of a computer, a camera, a goggle type display, a projector, a telephone, and an electronic book.
9. A semiconductor device comprising:
a semiconductor layer over a substrate;
a gate insulating film over the semiconductor layer;
a gate electrode over the gate insulating film; and
a source electrode and a drain electrode electrically connected to the semiconductor layer,
wherein the gate electrode includes a first conductive film and a second conductive film over and in contact with the first conductive film,
wherein one end of the first conductive film extends beyond one end of the second conductive film, and the other end of the first conductive film is in contact with the other end of the second conductive film,
wherein the gate insulating film extends beyond the other end of the first conductive film, and
wherein each of the first conductive film and the second conductive film has an inclined side surface.
10. The semiconductor device according to claim 9 , wherein the gate insulating film extending beyond the other end of the first conductive film is thinner than the gate insulating film overlapped with the first conductive film.
11. The semiconductor device according to claim 9 , wherein the gate insulating film is not in contact with the source electrode and the drain electrode.
12. The semiconductor device according to claim 9 , wherein the gate insulating film does not extend beyond the one end of the first conductive film.
13. The semiconductor device according to claim 9 , wherein the semiconductor device is incorporated into one selected from the group consisting of a computer, a camera, a goggle type display, a projector, a telephone, and an electronic book.