Method for characterizing identified defects during charged particle beam inspection and application thereof
A method for characterizing identified defects during charged particle beam inspection of a sample is disclosed. The method comprises obtaining a voltage contrast image of the sample by using a charged particle beam imaging apparatus at an inspection temperature; identifying, from the voltage contrast image, the presence of at least one defect on the sample; providing reference data of the sample, wherein the reference data represents at least one reference defect on the sample; comparing the location or geographical distribution of the identified defects and the reference defects on the sample to correlate the identified defects with the inspection temperature thereby characterizing the identified defects.
1. A method for characterizing defects during charged particle beam inspection of a sample, comprising:
obtaining a first voltage contrast (VC) image of said sample by using a charged particle beam imaging apparatus at a first imaging temperature from a first direction;
constructing a first defect distribution map of said sample from said first direction according to said first VC image;
obtaining a second VC image of said sample by using said charged particle beam imaging apparatus at a second imaging temperature from said first direction, wherein said second imaging temperature is different from said first imaging temperature;
constructing a second defect distribution map of said sample from said first direction according to said second VC image; and
comparing said first defect distribution map with said second defect distribution map.
2. The method according to claim 1 , wherein said first direction is from top of said sample to bottom of said sample.
3. The method according to claim 1 , wherein said comparing said first defect distribution map with said second defect distribution map further comprises identifying common defects and non-common defects between said comparing said first defect distribution map and said second defect distribution map.
4. The method according to claim 1 , wherein said comparing said first defect distribution map with said second defect distribution map further comprises identifying temperature-sensitive leakage defects and temperature-insensitive leakage defects.
5. The method according to claim 4 , wherein said temperature-insensitive leakage defects comprise short circuit defects, and said temperature-sensitive leakage defect comprise sub-threshold leakage and reverse biased junction leakage.
6. The method according to claim 1 , wherein said second imaging temperature is lower than said first imaging temperature.
7. The method according to claim 1 , wherein said first imaging temperature is within a range of −50° C. to 350° C.
8. The method according to claim 1 , wherein said first imaging temperature is room temperature.
9. A method for characterizing defects of a sample, comprising:
conducting a reference defect test on said sample at a reference test temperature;
constructing a reference defect distribution map of said sample from an inspecting direction according to said reference defect test;
conducting a first defect test on said sample at a first temperature, wherein said first temperature is different from said reference test temperature;
constructing a first defect distribution map of said sample from said inspecting direction according to said first defect test; and
comparing said first defect distribution map with said reference defect distribution map.
10. The method according to claim 9 , wherein said reference defect test is an electrical failure test for testing electrical failure defects.
11. The method according to claim 9 , wherein said first defect test is a charged particle beam inspection.