IP Library › Granted Patent US 8,664,760
Granted Patent B2
US 8,664,760 · App. 13/343,582 · Granted Mar 4, 2014

Connector design for packaging integrated circuits

Inventors: Chen-Hua Yu (Hsin-Chu, TW); Shin-Puu Jeng (Hsin-Chu, TW); Shang-Yun Hou (Jubei, TW); Cheng-Chieh Hsieh (Yongkang District, TW); Kuo-Ching Hsu (Chung-Ho, TW); Ying-Ching Shih (Taipei, TW); Po-Hao Tsai (Zhongli, TW); Chin-Fu Kao (Taipei, TW); Cheng-Lin Huang (Hsin-Chu, TW); Jing-Cheng Lin (Hsin-Chu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
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Quick Facts
Patent No.
US 8,664,760
App. No.
13/343,582
Granted
Mar 4, 2014
Kind
B2
Abstract

A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.

Claims (20)

1. A device comprising:

a top dielectric layer having a top surface;

a metal pillar comprising a portion over the top surface of the top dielectric layer;

a metal cap over the metal pillar, wherein a portion of the metal cap is aligned to the metal pillar, and wherein the metal cap has a lateral size greater than a lateral size of the metal pillar;

a first non-wetting layer on a sidewall of the metal cap, wherein the first non-wetting layer is not wettable to molten solder; and

a solder region over and electrically coupled to the metal cap.

2. The device of claim 1 further comprising a second non-wetting layer on a sidewall of the metal pillar, wherein the second non-wetting layer is not wettable to molten solder, and wherein the second non-wettable layer comprises materials for forming the metal pillar and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

3. The device of claim 2 , wherein the metal cap and the metal pillar comprise different materials, and wherein the second non-wetting layer does not extend between the metal cap and the metal pillar.

4. The device of claim 1 , wherein the first non-wetting layer does not extend between the metal cap and the solder region.

5. The device of claim 1 wherein the first non-wettable layer comprises materials of the metal cap and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

6. The device of claim 1 , wherein the top dielectric layer and the metal pillar are comprised in a device die, wherein the device further comprises a package component bonded to the device die through the solder region.

7. A device comprising:

a metal pillar comprising a portion over a top surface of a top dielectric layer;

a metal cap over the metal pillar, wherein a portion of the metal cap is aligned to the metal pillar, and wherein the metal cap has a lateral size greater than a lateral size of the metal pillar;

a first non-wetting layer on a sidewall of the metal cap, wherein the first non-wetting layer is not wettable to molten solder; and

a solder region over and electrically coupled to the metal cap, wherein the first non-wetting layer does not extend between the metal cap and the solder region.

8. The device of claim 7 further comprising a second non-wetting layer on a sidewall of the metal pillar, wherein the second non-wetting layer is not wettable to molten solder, and wherein the second non-wettable layer comprises materials for forming the metal pillar and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

9. The device of claim 8 , wherein the metal cap and the metal pillar comprise different materials, and wherein the second non-wetting layer does not extend between the metal cap and the metal pillar.

10. The device of claim 7 , wherein the first non-wettable layer comprises materials of the metal cap and an element selected from the group consisting essentially of nitrogen, oxygen, and combinations thereof.

11. The device of claim 7 , wherein the top dielectric layer and the metal pillar are comprised in a device die, wherein the device further comprises a package component bonded to the device die through the solder region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 9, 2012
From: YU, CHEN-HUA; JENG, SHIN-PUU; HOU, SHANG-YUN; HSIEH, CHENG-CHIEH; HSU, KUO-CHING; SHIH, YING-CHING; TSAI, PO-HAO; KAO, CHIN-FU; HUANG, CHENG-LIN; LIN, JING-CHENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 027503/0424 →
Continuity (2)
Provisional Application 61491301 · May 30, 2011
Related Publication 20120306073A1 · Dec 6, 2012