Method to align mask patterns
Alignment tolerances between narrow mask lines, for forming interconnects in the array region of an integrated circuit, and wider mask lines, for forming interconnects in the periphery of the integrated circuit, are increased. The narrow mask lines are formed by pitch multiplication and the wider mask lines are formed by photolithography. The wider mask lines and are aligned so that one side of those lines is flush with or inset from a corresponding side of the narrow lines. Being wider, the opposite sides of the wider mask lines protrude beyond the corresponding opposite sides of the narrow mask lines. The wider mask lines are formed in negative photoresist having a height less than the height of the narrow mask lines. Advantageously, the narrow mask lines can prevent expansion of the mask lines in one direction, thus increasing alignment tolerances in that direction. In the other direction, use of photolithography and a shadowing effect caused by the relative heights of the photoresist and the narrow mask lines causes the wider mask lines to be formed with a rounded corner, thus increasing alignment tolerances in that direction by increasing the distance to a neighboring narrow mask line.
1. An integrated circuit, comprising:
a plurality of interconnects, each interconnect having:
a first portion and a second portion,
wherein the first portions of the interconnects are substantially parallel to each other between first and second spaced planes extending perpendicular to the lines, and
wherein the first portion and the second portion of each interconnect contact in an overlap region, wherein only one corner of the second portion protrudes beyond a side of the first portion in the overlap region, wherein, as seen in a top down view, the one corner defines a curve extending from the side of the first portion to a corresponding side of the second portion.
2. The integrated circuit of claim 1 , wherein the second portion is wider than the first portion.
3. The integrated circuit of claim 1 , wherein the first and second spaced planes are in an array region of the integrated circuit.
4. The integrated circuit of claim 1 , wherein the interconnects comprise a metal.
5. The integrated circuit of claim 1 , wherein a pitch of the first portions is about 100 nm or less.
6. The integrated circuit of claim 1 , wherein a corner of the first portion protrudes beyond a side of the second portion in the overlap region.
7. The integrated circuit of claim 1 , wherein a side of the second portion opposite the protruding corner is flush with a corresponding side of the first portion.
8. The integrated circuit of claim 3 , wherein portions of the interconnects in the array region connect a plurality of memory cells.
9. The integrated circuit of claim 3 , wherein the second portions extend into a periphery region of the integrated circuit.
10. The integrated circuit of claim 9 , wherein the periphery region of the integrated circuit comprises logic circuitry.
11. An integrated circuit, comprising:
a plurality of interconnects, the interconnects each having a first portion with a first width in an array region and a second portion with a second width in a periphery region, wherein the second width is larger than the first width,
wherein an end of each of the second interconnect portions contacts an end of each of the first interconnect portions,
wherein one side of each of the second interconnect portions is substantially collinear with or inset from one side of each of the first interconnect portions, the one side of each of the second interconnect portions extending along a length of the second interconnect portion and the one side of each of the first interconnect portions extending along a length of the first interconnect portions,
wherein each of the second interconnect portions comprises a first corner protruding beyond a side of a corresponding first interconnect portion contacted by the each of the second interconnect portions, wherein, as seen in a top down view, the first corner defines a curve extending from the side of the corresponding first interconnect portion to a corresponding side of the each of the second interconnect portions.
12. The integrated circuit of claim 11 , wherein interconnects of the plurality of interconnects diverges away from the points of contact between the first and second portions.
13. The integrated circuit of claim 11 , wherein the second interconnect portions contact the first interconnect portions substantially along an entire expanse of the first width.
14. The integrated circuit of claim 11 , wherein portions of the interconnects in the array region are substantially parallel to one another.
15. The integrated circuit of claim 11 , wherein a pitch of the first plurality of interconnects is less than about 100 nm.
16. The integrated circuit of claim 11 , wherein the one side of each of the second interconnect portions is inset from the one side of each of the first interconnect portions, wherein a second corner of the each of the first interconnect portions protrudes beyond the one side of each of the second interconnect portions.
17. The integrated circuit of claim 15 , wherein the first plurality of interconnects are pitch multiplied interconnects.
18. The integrated circuit of claim 15 , wherein the interconnects comprise copper.
19. The integrated circuit of claim 15 , wherein the interconnects comprise aluminum.
20. The integrated circuit of claim 16 , wherein the second corner is substantially square.
21. The integrated circuit of claim 16 , wherein an overlap region is defined between ends of mutually contacting first and second interconnect portions, wherein the first corner is curved over substantially an entirety of the overlap region.