Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit
In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided.
1. A semiconductor integrated circuit device comprising:
a first circuit supplied with a first power supply voltage which outputs a first pair of complementary signals and receives a first signal, each of the first pair of complementary signals and the first signal having a first amplitude corresponding to the first power supply voltage;
a second circuit supplied with a second power supply voltage via a first switch which outputs a second pair of complementary signals and receives a second signal, each of the second pair of complementary signals and the second signal having a second amplitude corresponding to the second power supply voltage,
wherein the second power supply voltage is lower than the first power supply voltage;
a control circuit for controlling the first switch;
a first level-up level conversion circuit which receives the second pair of complementary signals and outputs the first signal; and
a first level-down level conversion circuit which receives the first pair of complementary signals and outputs the second signal.
2. A semiconductor integrated circuit device according to claim 1 , further comprising:
a third circuit supplied with a second power supply voltage via a second switch which outputs a third pair of complementary signals and receives a third signal, each of the third pair of complementary signals and the third signal having a second amplitude corresponding to the second power supply voltage;
a second level-up level conversion circuit which receives the third pair of complementary signals and outputs a fourth signal; and
a second level-down level conversion circuit which receives a fourth pair of complementary signals and outputs the third signal,
wherein the first circuit outputs the fourth pair of complementary signals and receives the fourth signal, each of the fourth pair of complementary signals and the forth signal having a first amplitude corresponding to the first power supply voltage, and
wherein the control circuit controls the second switch.
3. A semiconductor integrated circuit device according to claim 1 , wherein the control circuit has first, second and third modes,
wherein the control circuit controls the first switch to supply the second power supply voltage to the second circuit and the second switch to supply the second power supply voltage to the third circuit in the first mode,
wherein the control circuit controls the first switch to supply the second power supply voltage to the second circuit and the second switch not to supply the second power supply voltage to the third circuit in the second mode,
wherein the control circuit controls the first switch not to supply the second power supply voltage to the second circuit and the second switch not to supply the second power supply voltage to the third circuit in the third mode.
4. A semiconductor integrated circuit device according to claim 1 , wherein the second circuit includes a memory.