Memory cells
Some embodiments include memory cells which contain chalcogenide material having germanium in combination with one or both of antimony and tellurium. An atomic percentage of the germanium within the chalcogenide material is greater than 50%; and may be, for example, within a range of from greater than or equal to about 52% to less than or equal to about 78%. In some embodiments, the memory cell has a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element. The heater element may be L-shaped, with the L-shape having a vertical pillar region joining with a horizontal leg region. A bottom surface of the horizontal leg region may be directly against the bottom electrode, and a top surface of the vertical pillar region may be directly against the chalcogenide material.
1. A memory cell comprising:
a chalcogenide material which includes germanium in combination with antimony and tellurium;
wherein an atomic percentage of the germanium within the chalcogenide material is within a range of from greater than or equal to about 58% to less than or equal to about 68%; and
wherein an atomic percentage of the tellurium within the chalcogenide material is within a range of from greater than or equal to about 5% to less than or equal to about 18%.
2. The memory cell of claim 1 wherein the chalcogenide material consists of Ge 61 Sb 22 Te 17 or Ge 63 Sb 25 Te 12 .
3. The memory cell of claim 2 further comprising a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element; wherein the heater element is L-shaped; the L-shape having a vertical pillar region joining with a horizontal leg region; a bottom surface of the horizontal leg region being directly against the bottom electrode, and a top surface of the vertical pillar region being directly against the chalcogenide material.
4. A memory cell, comprising:
a first electrode;
a heater element over the first electrode; the heater element being shaped as an angled plate; the angled plate comprising a first portion extending along a first direction, a second portion extending along a second direction, and a corner joining the first and second portions to one another; a bottom surface of the first portion being directly against the first electrode;
a chalcogenide material over the heater element, the chalcogenide material being directly against an edge of the second portion of the heater element angled plate; the chalcogenide material comprising germanium in combination with one or more other elements; an atomic percentage of the germanium within the chalcogenide material being greater than about 50%; wherein the chalcogenide material consists of germanium, tellurium and antimony; wherein an atomic percentage of the tellurium within the chalcogenide material is within a range of from greater than or equal to about 5% to less than or equal to about 18%; and
a second electrode over the chalcogenide material.
5. A memory cell, comprising:
a first electrode;
a heater element over the first electrode; the heater element comprising a relatively wide region directly against the first electrode, and comprising a relatively narrow region above the relatively wide region;
a chalcogenide material over the heater element; the chalcogenide material being directly against the relatively narrow region; the chalcogenide material comprising germanium in combination with antimony and tellurium; an atomic percentage of the germanium in the chalcogenide material being within a range of from greater than or equal to about 52% to less than or equal to about 80%; an atomic percentage of the tellurium within the chalcogenide material being within a range of from greater than or equal to about 5% to less than or equal to about 18%; and
a second electrode over the chalcogenide material.