Flank wettable semiconductor device
A flank wettable semiconductor device is assembled from a lead frame or substrate panel by at least partially undercutting the lead frame or substrate panel with a first cutting tool to expose a flank of the lead frame and applying a coating of tin or tin alloy to the exposed flank prior to singulating the lead frame or substrate panel into individual semiconductor devices. The method includes electrically interconnecting lead frame flanks associated with adjacent semiconductor devices before applying the coating of tin or tin alloy. The lead frame flanks may be electrically interconnected during wire bonding.
1. A method of assembling a flank wettable semiconductor device, comprising:
providing a lead frame or substrate panel, the lead frame or substrate panel including a plurality of die attach flags, and wherein each of the flags has a plurality of associated electrical contact pads;
attaching semiconductor dies to the die attach flags;
electrically connecting bonding pads on the semiconductor dies with respective ones of the associated electrical contact pads of the flag upon which the die is attached with first bond wires;
electrically connecting the electrical contact pads of adjacent devices with a plurality of additional bond wires;
at least partially undercutting the lead frame or substrate panel with a first cutting tool to expose flanks of the electrical contact pads of the lead frame or substrate panel;
applying a coating of tin or tin alloy to said exposed flank; and
singulating the lead frame or substrate panel into individual semiconductor devices after applying said coating, wherein said singulating includes cutting the additional bond wires so that the electrical contact pads of adjacent devices are no longer electrically connected to each other.
2. The method of claim 1 , wherein said singulating includes cutting the lead frame or substrate panel with a second cutting tool to separate the lead frame or substrate panel into said individual semiconductor devices.
3. The method of claim 2 , wherein said second cutting tool is narrower than said first cutting tool.
4. The method of claim 1 , wherein said tin coating is performed by electro-plating or electro-deposition.
5. A QFN semiconductor device assembled by the method of to claim 1 .
6. A flank wettable QFN semiconductor device, comprising:
a lead frame including a plurality of leads;
a semiconductor die surrounded by the plurality of leads, wherein the leads are electrically connected to die bonding pads of the die with first bond wires;
additional bond wires attached to the plurality of leads, wherein the additional bond wires electrically connect the plurality of leads to respective leads of an adjacent device prior to the semiconductor device being separated from said adjacent device;
a mold compound that encapsulates the die, leads and first bond wires, wherein ends of the leads are exposed along side walls of the device;
a coating of tin or tin alloy on the exposed portions of the leads, wherein said coating is applied to the exposed portions of the leads prior to said device being separated from an adjacent device during assembly.
7. The flank wettable semiconductor device of claim 6 , wherein said coating is applied to the exposed portions of the leads by electro-plating or electro-deposition.