System, method and computer readable medium for through silicon via structure measurement
A system for through silicon via (TSV) structure measurement comprises a reflectometer, and a computing unit. The reflectometer emits a broadband light beam to at least a TSV structure and receives a reflection spectrum of at least a TSV structure. The computing unit is coupled with the reflectometer and determines the depth of the TSV structure in accordance with the reflection spectrum.
1. A method for measurement of through silicon via structure, the method comprising:
obtaining a reflection spectrum of at least one through silicon via structure, wherein the reflection spectrum includes a high-frequency portion and a low-frequency portion, and the low-frequency portion serves as a carrier frequency of the high-frequency portion;
carrying out a calculation based upon a magnitude of the high-frequency portion contained in the reflection spectrum; and
determining a depth of the at least one through silicon via structure according to the calculation.
2. The method of claim 1 , wherein the calculation further includes calculating a magnitude of the low-frequency portion of the reflection spectrum, and the step of depth determining includes determining a thickness of an oxide layer according to the calculation based upon the magnitude of the low-frequency portion of the reflection spectrum.
3. The method of claim 1 , wherein the calculation further includes separating the high-frequency portion from the low-frequency portion so as to calculate the high-frequency portion and the low-frequency portion separately.
4. The method of claim 1 , wherein the calculation further includes performing a Discrete Fourier transformation of the reflection spectrum, and the step of depth determining further includes determining the depth of the at least one through silicon via structure according to the calculation after the Discrete Fourier transformation of the reflection spectrum.
5. The method of claim 1 , wherein the reflection spectrum is obtained by operating a reflectometer emitting on the at least one through silicon via structure.
6. The method of claim 5 , wherein the reflection spectrum is obtained by operating the reflectometer emitting on a plurality of through silicon via structures simultaneously, and depths of the through silicon via structures are determined simultaneously by the step of depth determining.
7. A method for measurement of through silicon via structure, the method comprising:
obtaining a reflection spectrum of at least two through silicon via structures, wherein the reflection spectrum includes a high-frequency portion and a low-frequency portion, and the low-frequency portion serves as a carrier frequency of the high-frequency portion;
carrying out a calculation based upon a magnitude of the high-frequency portion contained in the reflection spectrum;
determining at least two depths of the through silicon via structures according to the calculation; and
determining whether the difference between the depths of the through silicon via structures is greater than a predetermined threshold, and if the difference between the depths is greater than the predetermined threshold, a substrate containing the through silicon via structures is defective.
8. The method of claim 7 , wherein the calculation further includes separating the high-frequency portion from the low-frequency portion so as to calculate the high-frequency portion and the low-frequency portion separately.
9. The method of claim 7 , wherein the calculation further includes performing a Discrete Fourier transformation of the reflection spectrum, and the step of depth determining further includes determining the depths of the at least two through silicon via structures according to the calculation after the Discrete Fourier transformation of the reflection spectrum.
10. The method of claim 7 , wherein the reflection spectrum is obtained by operating a reflectometer emitting on at least two of the through silicon via structures.
11. The method of claim 10 , wherein the reflection spectrum is obtained by operating the reflectometer emitting on a plurality of the through silicon via structures simultaneously, and depths of the through silicon via structures are simultaneously determined by the step of depth determining.
12. A computer readable medium for storing an application program, wherein the application program allows a system for measurement of through silicon via structure to perform a detecting method, the detecting method comprising:
obtaining a reflection spectrum of at least two of the through silicon via structures, wherein the reflection spectrum includes a high-frequency portion and a low-frequency portion, and the low-frequency portion serves as a carrier frequency of the high-frequency portion;
carrying out a calculation based upon a magnitude of the high-frequency portion contained in the reflection spectrum,
determining at least two depths of the through silicon via structures according to the calculation; and
determining whether the difference between the depths of both of the through silicon via structures is greater than a predetermined threshold, and if the difference in depths is greater than the predetermined threshold, a substrate containing the through silicon via structures is defective.
13. The computer readable medium of claim 12 , wherein the calculation further includes calculating the magnitude of the low-frequency portion of the reflection spectrum, and the step of depth determining includes determining a thickness of an oxide layer according to the calculation based upon the magnitude of the low-frequency portion of the reflection spectrum.
14. The computer readable medium of claim 12 , wherein the calculation further includes separating the high-frequency portion from the low-frequency portion so as to calculate the high-frequency portion and the low-frequency portion separately.
15. The computer readable medium of claim 12 , wherein the calculation further includes performing a Discrete Fourier transformation of the reflection spectrum, and the step of depth determining further includes determining the depths of at least two of the through silicon via structures according to the calculation after the Discrete Fourier transformation of the reflection spectrum.
16. The computer readable medium of claim 12 , wherein the reflection spectrum is obtained by operating a reflectometer emitting on at least two of the through silicon via structures.
17. The computer readable medium of claim 15 , wherein the reflection spectrum is obtained by operating the reflectometer emitting on a plurality of the through silicon via structures simultaneously, and depths of the through silicon via structures are simultaneously determined by the step of depth determining.