IP Library Granted Patent US 8,728,284
Granted Patent B2
US 8,728,284 · App. 13/412,692 · Granted May 20, 2014

Barium copper sulfur fluoride transparent conductive thin films and bulk material

Inventors: Jesse A. Frantz (Landover, MD); Jasbinder S. Sanghera (Ashburn, VA); Vinh Q. Nguyen (Fairfax, VA); Woohong Kim (Lorton, VA); Ishwar D. Aggarwal (Charlotte, NC)
Assignee: The United States of America, as represented by the Secretary of the Navy
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Quick Facts
Patent No.
US 8,728,284
App. No.
13/412,692
Granted
May 20, 2014
Kind
B2
Abstract

A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu 2 S, BaS and BaF 2 , heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Claims (16)

1. A method for making a barium copper sulfur fluoride (BCSF) transparent conductive thin film, comprising:

(a) forming a sputter target by hot pressing bulk BCSF; and

(b) sputtering a BCSF thin film from the target onto a substrate;

wherein after sputtering, the film is soaked in water for at least 30 seconds and then heated at 100° C. for 5 minutes; and

wherein the resulting film has a conductivity of 800 S/cm.

2. The method of claim 1 , wherein the BCSF crystalline phase is cubic in space group Fm3m.

3. The method of claim 1 , wherein the substrate is a plastic substrate.

4. The method of claim 3 , wherein the plastic substrate is selected from group consisting of polyethersulfone, polyethylene terephthalate, and polyimide substrates.

5. A method for making a barium copper sulfur fluoride (BCSF) transparent conductive thin film, comprising:

(a) forming a sputter target by hot pressing Cu 2 S, BaS and BaF 2 powders in stoichiometric proportions; and

(b) sputtering a BCSF thin film from the target onto a substrate;

wherein after sputtering, the film is soaked in water for at least 30 seconds and then heated at 100° C. for 5 minutes; and

wherein the resulting film has a conductivity of 800 S/cm.

6. The method of claim 5 , wherein the BCSF crystalline phase is cubic in space group Fm3m.

7. The method of claim 5 , wherein the substrate is a plastic substrate.

8. The method of claim 7 , wherein the plastic substrate is selected from group consisting of polyethersulfone, polyethylene terephthalate, and polyimide substrates.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2014
From: FRANTZ, JESSE A; SANGHERA, JASBINDER S; NGUYEN, VINH Q; KIM, WOOHONG; AGGARWAL, ISHWAR D
To: THE GOVERNMENT OF THE UNITED STATES, AS REPRESENTED BY THE SECRETARY OF THE NAVY
Reel/Frame 033036/0825 →
Continuity (3)
Division 12250808 · Oct 14, 2008
Provisional Application 61098390 · Sep 19, 2008
Related Publication 20120168742A1 · Jul 5, 2012