Visible sensing transistor, display panel and manufacturing method thereof
A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.
1. A light sensing transistor, comprising:
a semiconductor disposed on a substrate;
an ohmic contact disposed on the semiconductor;
an etch stopping layer disposed on the ohmic contact;
a source electrode and a drain electrode both disposed on the etch stopping layer;
a passivation layer disposed on the source electrode and the drain electrode; and
a gate electrode disposed on the passivation layer,
wherein the etch stopping layer, the source electrode, and the drain electrode are comprised of the same material.
2. The light sensing transistor of claim 1 , wherein the source electrode and the drain electrode comprise a bottom layer and an upper layer disposed on the bottom layer, and the light sensing transistor senses visible wavelengths.
3. The light sensing transistor of claim 2 , wherein the bottom layer and the etch stopping layer both comprise titanium, and the upper layer comprises copper.
4. The light sensing transistor of claim 3 , wherein the etch stopping layer has a thickness less than or equal to 300 Å.
5. The light sensing transistor of claim 1 , wherein the semiconductor comprises an amorphous silicon, and the light sensing transistor senses visible wavelengths.
6. A display panel, comprising:
a light blocking layer disposed on a substrate;
an insulating layer disposed on the light blocking layer;
a buffer layer and a first light sensing transistor both disposed on the insulating layer; and
a second light sensing transistor disposed on the buffer layer,
wherein the first light sensing transistor comprises:
a first semiconductor disposed on the insulating layer,
an ohmic contact disposed on the semiconductor,
an etch stopping layer disposed on the ohmic contact, and
a source electrode and a drain electrode both disposed on the etch stopping layer,
wherein the etch stopping layer, the source electrode, and the drain electrode are comprised of the same material, and
wherein the first light sensing transistor and the second light sensing transistor are configured to sense different wavelengths.
7. The display panel of claim 6 , wherein the source electrode and the drain electrode comprise a bottom layer and an upper layer disposed on the bottom layer.
8. The display panel of claim 7 , wherein the bottom layer and the etch stopping layer both comprise titanium, and the upper layer comprises copper.
9. The display panel of claim 8 , wherein the etch stopping layer has a thickness less than or equal to 300 Å.
10. The display panel of claim 6 , wherein the etch stopping layer and the ohmic contact have the same pattern.
11. The display panel of claim 6 , wherein:
the first semiconductor comprises an amorphous silicon; and
the second light sensing transistor comprises a second semiconductor comprised of a fine crystalline silicon, an amorphous silicon germanium, or an amorphous germanium.
12. The display panel of claim 11 , wherein the second semiconductor and the buffer layer have a same pattern.
13. The display panel of claim 6 , wherein the second light sensing transistor comprises:
a first gate electrode disposed between the light blocking layer and the insulating layer; and
a second gate electrode electrically connected to the first gate electrode.
14. The display panel of claim 6 , wherein the light blocking layer comprises an amorphous germanium or an amorphous silicon germanium.