Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits
A memory controller has a digital signal processor. The digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device. The digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell.
1. A memory controller, comprising:
a digital signal processor;
an M+N bit digital to analog converter coupled to receive M bits of digital data in combination with the N bits of additional programming resolution from the digital signal processor, the digital to analog converter configured to output a plurality of analog signals;
an M+L bit analog to digital converter coupled to receive an analog signal and coupled to output an M+L bit digital signal to the digital signal processor; and
wherein N is not equal to L;
wherein the plurality of analog signals output by the digital to analog converter are used to program a plurality of memory cells commonly coupled to a selected access line of a memory device substantially simultaneously with M+N bits; and
wherein the analog signal received by the analog to digital converter comprises M+L bits is sensed separately from one of the plurality of memory cells coupled to the selected access line of the memory device.
2. The memory controller of claim 1 , wherein the digital signal processor is configured to retrieve M bits of data from the M+L bit digital signal.
3. The memory controller of claim 1 , wherein the M+L bit analog to digital converter is configured to receive the analog signal from the one of the plurality of memory cells coupled to the selected access line of the memory device through an output buffer of the memory device.
4. The memory controller of claim 1 , wherein the M+N bit digital to analog converter is configured to transfer the plurality of analog signals to read/write circuitry of the memory device.
5. The memory controller of claim 1 , wherein the M+N bit digital to analog converter is configured to transfer the plurality of analog signals to the memory device across a bus selected from the group consisting of a parallel signal bus, a serial signal bus, a bi-directional signal bus, and a unidirectional signal bus.
6. A memory controller, comprising:
a digital signal processor;
wherein the digital signal processor is configured to output a plurality of digital data signal used to substantially simultaneously program a plurality of memory cells commonly coupled to a selected access line of a memory device with M+N bits of program data;
wherein the digital signal processor is configured to receive a digital data signal of M+L bits read separately from one of the plurality of memory cells coupled to the selected access line of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the one of the plurality of memory cells coupled to the selected access line of the memory device; and
wherein N is not equal to L.
7. The memory controller of claim 6 , wherein the memory controller further comprises:
a digital to analog converter coupled to receive the plurality of digital data signals and to convert the plurality of digital data signals to a plurality of analog data signals for output to the memory device.
8. The memory controller of claim 6 , wherein the memory controller further comprises:
an analog to digital converter coupled to receive an input analog data signal from the memory device and to convert the input analog data signal to the digital data signal of M+L bits.
9. The memory controller of claim 6 , wherein the digital signal processor is configured to output the plurality of digital data signals to the memory device.
10. The memory controller of claim 9 , wherein the digital signal processor is configured to output the of digital data signals across a digital bus between the memory controller and the memory device, wherein the digital bus is selected from the group consisting of a parallel data bus, a serial data bus, a bi-directional data bus, and a unidirectional data bus.
11. The memory controller of claim 9 , wherein the digital signal processor is configured to output the plurality of digital data signals to an I/O buffer of the memory device.
12. The memory controller of claim 11 , wherein the digital signal processor is configured to receive the digital data signal of M+L bits from the I/O buffer of the memory device.
13. The memory controller of claim 6 , wherein the digital signal processor is configured to output the plurality of digital data signals to a digital to analog converter of the memory device.
14. The memory controller of claim 6 , wherein the digital signal processor is configured to receive the digital data signal of M+L bits from an analog to digital converter of the memory device.
15. A memory controller, comprising:
a digital signal processor, wherein the digital signal processor is configured to output a plurality of digital data signals, and wherein the digital signal processor is configured to receive a digital data signal of M+L bits of data, and wherein the digital signal processor is configured to retrieve from the received digital data signal M bits of data;
an M+N bit digital to analog converter coupled to receive the plurality of digital data signals from the digital signal processor, and configured to output plurality of analog signals to a memory device; and
an M+L bit analog to digital converter coupled to receive an analog signal from the memory device, and configured to output the digital data signal of M+L bits of data to the digital signal processor;
wherein N is not equal to L;
wherein the plurality of analog signals output by the digital to analog converter are used to program a plurality of memory cells commonly coupled to a selected access line of the memory device substantially simultaneously with M+N bits of data; and
wherein the M+L bits of data are sensed separately from one of the plurality of memory cells coupled to the selected access line of the memory device.
16. The memory controller of claim 15 , wherein the M+N bit digital to analog converter is configured to output the plurality of analog signals to the memory device across a bus selected from the group consisting of a parallel signal bus, a serial signal bus, a bi-directional signal bus, and a unidirectional signal bus.