Method and system for image sensor and lens on a silicon back plane wafer
An improved image sensor, e.g., CCD, CID, CMOS. The image sensor includes a substrate, e.g., silicon wafer. The sensor also includes a plurality of photo diode regions, where each of the photo diode regions is spatially disposed on the substrate. The sensor has an interlayer dielectric layer overlying the plurality of photo diode regions and a shielding layer formed overlying the interlayer dielectric layer. A silicon dioxide bearing material is overlying the shielding layer. A plurality of lens structures are formed on the silicon dioxide bearing material. The sensor also has a color filter layer overlying the lens structures and a plurality of second lens structures overlying the color filter layer according to a preferred embodiment.
1. An image sensor comprising:
a substrate;
a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate;
one or more interconnect layers overlying the plurality of photo diode regions;
an interlayer dielectric layer overlying all the interconnect layers;
a shielding layer overlying the interlayer dielectric layer, the shielding layer having openings only above the plurality of photo diode regions to allow light to reach the photo diode regions;
a plurality of lens structures comprising a silicon dioxide bearing material overlying the shielding layer, wherein the shielding layer comprises openings only underneath the plurality of lens structures and is configured to shield regions not underneath the lens structures.
2. The sensor of claim 1 further comprising a color filter layer overlying the lens structures and a plurality of second lens structures overlying the color filter layer.
3. The sensor of claim 1 further comprising a planarizing layer overlying the plurality of lens structures formed on the silicon dioxide material.
4. The sensor of claim 1 wherein the shielding layer comprises a metal bearing material.
5. The sensor of claim 1 further comprising an organic planarized layer overlying the plurality of lens structures, a color filter array overlying the organic planarized layer, and a plurality of second lens structures overlying the color filter array, wherein the organic planarized layer is in direct contact with the plurality of lens structures and provides an planar top surface.
6. The sensor of claim 5 further comprising a planarized overcoat layer overlying the plurality of second lens structures.
7. The sensor of claim 1 wherein the substrate is a silicon wafer.
8. The sensor of claim 1 further comprising a plurality of MOS transistor regions formed on the substrate.
9. The sensor of claim 1 wherein the substrate, photo diode regions, interlayer dielectric layer, shielding layer, silicon dioxide bearing material, and plurality of lens structures are provided using silicon processing techniques.
10. An image sensor comprising:
a substrate;
a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate;
one or more interconnect layers overlying the plurality of photo diode regions;
an interlayer dielectric layer overlying the one or more interconnect layers;
a shielding layer overlying the interlayer dielectric layer and the interconnect layers, the shielding layer having openings only above the plurality of photo diode regions to allow light to reach the photo diode regions;
and
a plurality of lens structures comprising a silicon dioxide bearing material overlying the shielding layer.
11. An image sensor comprising:
a substrate;
a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate;
one or more interconnect layers overlying the plurality of photo diode regions;
an interlayer dielectric layer overlying the one or more interconnect layers and the plurality of photo diode regions;
a shielding layer formed overlying the interlayer dielectric layer and substantially covers the interlayer dielectric layer with openings only overlying the plurality of photo diode regions; and
a plurality of lens structures directly above the shielding layer with no intervening layers.
12. The image sensor of claim 11 , wherein at least one of the plurality of lens structures is in direct contact with the shielding layer.