Package structure
The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes an dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying with the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.
1. A package structure, comprising:
an electronic element and a plurality of first conductive through vias across through said electronic element, and a plurality of conductive pads accompanying with said first conductive through vias on an active surface of said electronic element;
a filler material disposed adjacent to said electronic element;
a first redistribution layer disposed over said filler material, and connected to said first conductive through vias;
a first protective layer disposed over the active surface of said electronic element, said conductive pads, and said filler material; and
a second protective layer disposed over said redistribution layer, said dielectric layer, and said filler material.
2. The package structure according to claim 1 , wherein said electronic element comprises a semiconductor die or chip.
3. The package structure according to claim 1 , wherein said conductive pads comprises bonding pads, terminal contact pads or I/O pads.
4. The package structure according to claim 1 , wherein said electronic element which includes a dielectric layer on the backside surface of said electronic element, and said plurality of first conductive through vias across through said electronic element and said dielectric layer.
5. The package structure according to claim 1 , wherein said electronic element which includes a dielectric layer on the active surface of said electronic element, and said plurality of first conductive through vias across through said dielectric layer.
6. The package structure according to claim 1 , further comprises a metal or alloy base formed outside and adjacent to said filler material and around said package body.
7. The package structure according to claim 1 , wherein materials of said first and second protective layers comprise transparent material from soft or hard type.
8. The package structure according to claim 7 , further comprises a gap between said first protective layer and said electronic element.
9. The package structure according to claim 1 , further comprising:
a plurality of conductive balls disposed on said second protective layer and connected to said first redistribution layer.
10. The package structure according to claim 9 , further comprising:
a second redistribution layer disposed over said first protective layer, and connected to said conductive pads; and
a third protective layer disposed over said second redistribution layer and said first protective layer.
11. The package structure according to claim 10 , further comprising:
a plurality of solder bumps disposed on said third protective layer and connected to said second redistribution layer.
12. The package structure according to claim 10 , further comprising:
a plurality of second conductive through vias across through said filler material and connected to said second redistribution layer; and
a third redistribution layer in the second protective layer and connected to said second conductive through vias.
13. The package structure according to claim 12 , further comprising:
a plurality of conductive balls disposed on said second protective layer and connected to said third redistribution layer.