IP Library Granted Patent US 8,753,738
Granted Patent B2
US 8,753,738 · App. 13/784,353 · Granted Jun 17, 2014

Registered structure formation via the application of directed thermal energy to diblock copolymer films

Inventors: Dan B. Millward (Boise, ID); Eugene P. Marsh (Boise, ID)
Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 8,753,738
App. No.
13/784,353
Granted
Jun 17, 2014
Kind
B2
Abstract

Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Claims (32)

1. A substrate, comprising:

a base polymer material within a trench in a material overlying a substrate and comprising an ordered array of polymer domains; and

another polymer material comprising another ordered array of polymer domains, a first portion of the another ordered array of polymer domains on a surface of the base polymer material and comprising polymer domains registered to corresponding polymer domains of the base polymer material, and a second portion of the another ordered array of polymer domains overlying the material adjacent the trench.

2. The substrate of claim 1 , wherein the base polymer material comprises alternating lamellar domains oriented parallel to sidewalls of the trench and perpendicular to a floor of the trench.

3. The substrate of claim 1 , wherein the base polymer material comprises lines of half-cylinder polymer domains in a polymer matrix, the lines of half-cylinder polymer domains extending parallel to sidewalls of the trench and parallel to a floor of the trench.

4. The substrate of claim 1 , wherein the another polymer material comprises lamellar polymer domains oriented perpendicular to a floor of the trench.

5. The substrate of claim 1 , further comprising thermally conductive elements extending a length of the trench.

6. The substrate of claim 1 , further comprising an absorptive material or a reflective material only located over a floor of the trench.

7. A substrate comprising:

a base polymer material within trenches in a material overlying a substrate, the base polymer material confined within lateral boundaries of each of the trenches; and

another polymer material on a surface of the base polymer material within the trenches and over portions of the material between the trenches, portions of the another polymer material on the surface of the base polymer material comprising polymer domains registered to corresponding polymer domains of the base polymer material.

8. The substrate of claim 7 , further comprising a neutral wetting material between the another polymer material and the material.

9. The substrate of claim 7 , further comprising a neutral wetting material underlying the material and the base polymer material.

10. The substrate of claim 7 , further comprising a neutral wetting material substantially only located on floors of the trenches.

11. The substrate of claim 7 , further comprising a reflective material on surfaces of the material.

12. The substrate of claim 7 , further comprising an absorptive material on surfaces of the material.

13. The substrate of claim 7 , further comprising lines of a thermally conductive material extending beneath the trenches.

14. A thin film structure, comprising:

a material over a substrate and comprising at least one trench therethrough;

an array of polymer structures laterally confined within boundaries defined by sidewalls of the at least one trench; and

another array of polymer structures registered to and on surfaces of the array of polymer structures within the at least one trench and extending over the material adjacent the at least one trench, a pitch of two polymer structures of the another array of polymer structures the same as that of two other polymer structures of the array of polymer structures within the at least one trench.

15. The thin film structure of claim 14 , wherein a thickness of each polymer structure of the array of polymer structures is less than a depth of the at least one trench.

16. The thin film structure of claim 15 , wherein the thickness of each polymer structure of the array of polymer structures is about one-half the depth of the at least one trench.

17. The thin film structure of claim 14 , wherein a thickness of each polymer structure of the array of polymer structures is greater than a depth of the at least one trench.

18. The thin film structure of claim 17 , wherein the thickness of each polymer structure of the array of polymer structures is less than the pitch of the two polymer structures of the array of polymer structures.

19. The thin film structure of claim 14 , further comprising an opening between the two polymer structures of the array of polymer structures, and between the two other polymer structures of the another array of polymer structures.

20. The thin film structure of claim 19 , wherein the opening is from about 5 nanometers to about 50 nanometers wide.

21. The thin film structure of claim 19 , wherein the pitch of the two polymer structures of the array of polymer structures is less than or equal to about 35 nanometers.

22. The thin film structure of claim 19 , wherein the array of polymer structures comprises an array of polystyrene structures, and wherein the another array of polymer structures comprises another array of polystyrene structures on surfaces of the array of polystyrene structures.

23. The thin film structure of claim 19 , wherein the array of polymer structures comprises an array of poly(methyl methacrylate) structures, and wherein the another array of polymer structures comprises another array of poly(methyl methacrylate) structures on surfaces of the array of poly(methyl methacrylate) structures.

24. The substrate of claim 1 , wherein the base polymer material and the another polymer material comprise separate polymer films having substantially the same pitch.

25. The substrate of claim 7 , wherein the base polymer material and the another polymer material comprise separate films.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Continuity (3)
Division 13337567 · Dec 27, 2011
Continuation 11714336 · Mar 6, 2007
Related Publication 20130189492A1 · Jul 25, 2013