Plasma treatment device and plasma treatment method
Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.
1. A plasma processing method which processes a substrate by generating plasma from a processing gas introduced into a processing container, the plasma processing method comprising changing a ratio between an introducing amount of the processing gas introduced onto a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced onto a peripheral portion of the substrate received in the processing container, during a plasma process,
wherein the ratio between the introducing amount of the processing gas from the central introduction unit and the introducing amount of the processing gas from the peripheral introduction unit is alternately and repeatedly switched into a first introducing amount ratio and a second introducing amount ratio that is different from the first introducing amount ratio.
2. The plasma processing method of claim 1 , wherein the processing gas comprises HBr.
3. A plasma etching method for etching a substrate by introducing a processing gas, in which a plurality of material gases are mixed, into a processing container and generating plasma from the processing gas in the processing container, the plasma etching method comprising changing a mixture ratio of the material gases that are different from each other to control a critical dimension (CD),
wherein a ratio between an introducing amount of the processing gas introduced on a center portion of the substrate and an introducing amount of the processing gas introduced on a peripheral portion of the substrate is alternately and repeatedly switched into a first introducing amount ratio and a second introducing amount ratio that is different from the first introducing amount ratio, during a plasma etching process.
4. The plasma etching method of claim 3 , wherein the plurality of material gases comprise a CF 4 gas and a CHF 3 gas, and a supplying amount of the CF 4 gas and a supplying amount of the CHF 3 gas are controlled.