Wafer bonding apparatus
Provided is a wafer bonding apparatus which performs pressurization and heating and eliminates nonuniformity of wafer thickness by changing the shape of a pressurizing surface so that planarity of a wafer bonding surface is improved. The wafer bonding apparatus places a plurality of wafers to be bonded between an upper unit ( 101 U) and a lower unit ( 101 L), and bonds the wafers by applying pressure and heat by the upper unit and the lower unit. The wafer bonding apparatus is provided with a top plate ( 111 ), a pressure profile control module ( 131 ), and a heater section arranged between the top plate and the pressure profile control module for heating. Shape change generated on the surface of the pressure profile control module causes change of the surface of the top plate.
1. A wafer bonding apparatus comprising:
an upper unit;
a lower unit; and
a pressurizing unit,
wherein plural wafers to be bonded are pressurized and heated between the upper unit and the lower unit,
wherein at least one of the upper unit and the lower unit includes a plurality of heating modules, the plurality of heating modules being concentrically arranged such that at least one heating module is disposed at a position corresponding to the central portion of said one of the upper unit or the lower unit, and the other heating modules are circumferentially disposed in surroundings of the central portion, and each of the heating modules includes a separate heater,
wherein each of the heating modules is supported such that each of the heating modules is capable of individually transmitting pressuring force when the pressurizing unit pressurizes the plural wafers through the plurality of heating modules.
2. The wafer bonding apparatus according to claim 1 , wherein temperature control is performed in each of the heating modules.
3. The wafer bonding apparatus according to claim 2 , wherein:
a thermometer is placed at a position corresponding to each of the heating modules; and
the temperature control of each of the heating modules is performed using a measured value of the thermometer.
4. The wafer bonding apparatus according to claim 1 , wherein:
at least one of the upper unit or the lower unit further includes a pressure profile control module; and
a heat insulating member is provided between the plurality of heating modules and the profile control module.
5. The wafer bonding apparatus according to claim 4 , wherein:
a heating-module supporting member is provided for each of the heating modules; and
the heating-module supporting member is arranged to pass through an opening of the heat insulating member.
6. The wafer bonding apparatus according to claim 1 , wherein the plurality of heating modules are divided into a plurality of groups and temperature control is separately performed in each group.
7. The wafer bonding apparatus according to claim 6 , wherein the plurality of groups include a group of heating modules in a central portion of each of the upper unit and the lower unit, a group of heating modules in an intermediate portion of each of the upper unit and the lower unit, and a group of heating modules in a circumferential portion of each of the upper unit and the lower unit.
8. The wafer bonding apparatus according to claim 1 , wherein a cooling piping is disposed so as to pierce the plurality of heating modules.
9. A wafer bonding apparatus comprising:
an upper unit; and
a lower unit,
wherein plural wafers to be bonded are pressurized and heated between the upper unit and the lower unit,
wherein at least one of the upper unit and the lower unit includes a plurality of heating modules concentrically arranged such that at least one heating module is disposed at a position corresponding to the central portion of said one of the upper unit and the lower unit, and the other heating modules are circumferentially disposed in surroundings of the central portion, and each of the heating modules includes a separate heater; and
wherein each of the heating modules is supported such that each of the heating modules is capable of individually transmitting pressuring force when the pressurizing unit pressurizes the plural wafers through the plurality of heating modules.
10. The wafer bonding apparatus according to claim 9 ,
wherein the plurality of heating modules are divided into a plurality of groups and temperature control is separately performed in each group; and
wherein the plurality of groups include a group of heating modules in a central portion of each of the upper unit and the lower unit, a group of heating modules in an intermediate portion of each of the upper unit and the lower unit, and a group of heating modules in a circumferential portion of each of the upper unit and the lower unit.
11. The wafer bonding apparatus according to claim 1 , wherein each of the heating modules is supported by a heating module support member such that each of the heating modules is capable of individually transmitting pressuring force through the heating module support member and said one of the upper unit and the lower unit is capable of absorbing deformation of its pressurizing surface caused by a variation in wafer thickness when the pressurizing unit pressurizes the plural wafers through the plurality of heating modules.
12. The wafer bonding apparatus according to claim 9 wherein each of the heating modules is supported by a heating module support member such that each of the heating modules is capable of individually transmitting pressuring force through the heating module support member and said one of the upper unit and the lower unit is capable of absorbing deformation of its pressurizing surface caused by a variation in wafer thickness when the plural wafers are pressurized through the plurality of heating modules.